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Marco De Michielis
Marco De Michielis
CNR-IMM Sede di Agrate Brianza
E-mail confirmado em mdm.imm.cnr.it - Página inicial
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Citado por
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Ano
Few electron limit of n-type metal oxide semiconductor single electron transistors
E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
842012
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs
M De Michielis, D Esseni, F Driussi
IEEE Transactions on Electron Devices 54 (1), 115-123, 2006
552006
A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors
M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
492007
Effective Hamiltonian for the hybrid double quantum dot qubit
E Ferraro, M De Michielis, G Mazzeo, M Fanciulli, E Prati
Quantum information processing 13 (5), 1155-1173, 2014
452014
On the origin of the mobility reduction in n-and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks
P Toniutti, P Palestri, D Esseni, F Driussi, M De Michielis, L Selmi
Journal of Applied Physics 112 (3), 2012
422012
Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations
F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, ...
IEEE transactions on electron devices 58 (6), 1583-1593, 2011
372011
Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling
M De Michielis, E Ferraro, M Fanciulli, E Prati
Journal of Physics A: Mathematical and Theoretical 48 (6), 065304, 2015
352015
Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain
E Ferraro, M De Michielis, M Fanciulli, E Prati
Physical Review B 91 (7), 075435, 2015
332015
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
N Serra, F Conzatti, D Esseni, M De Michielis, P Palestri, L Selmi, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
322009
Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture
D Rotta, M De Michielis, E Ferraro, M Fanciulli, E Prati
Quantum Information Processing 15 (6), 2253-2274, 2016
252016
Valley blockade and multielectron spin-valley Kondo effect in silicon
A Crippa, MLV Tagliaferri, D Rotta, M De Michielis, G Mazzeo, M Fanciulli, ...
Physical Review B 92 (3), 035424, 2015
252015
Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation
M De Michielis, E Prati, M Fanciulli, G Fiori, G Iannaccone
Applied Physics Express 5 (12), 124001, 2012
222012
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations
E Ferraro, M De Michielis, M Fanciulli, E Prati
Quantum Information Processing 14 (1), 47-65, 2015
192015
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering: (Review invited paper)
D Esseni, F Conzatti, M De Michielis, N Serra, P Palestri, L Selmi
Journal of computational electronics 8, 209-224, 2009
172009
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach
M De Michielis, D Esseni, P Palestri, L Selmi
IEEE transactions on electron devices 56 (9), 2081-2091, 2009
172009
Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study
F Conzatti, M De Michielis, D Esseni, P Palestri
Solid-state electronics 53 (7), 706-711, 2009
132009
Modular printed circuit boards for broadband characterization of nanoelectronic quantum devices
MLV Tagliaferri, A Crippa, S Cocco, M De Michielis, M Fanciulli, G Ferrari, ...
IEEE Transactions on Instrumentation and Measurement 65 (8), 1827-1835, 2016
122016
Trade-off between electron velocity and density of states in ballistic nano-MOSFETs
M De Michielis, D Esseni, F Driussi
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
102005
Silicon spin qubits from laboratory to industry
M De Michielis, E Ferraro, E Prati, L Hutin, B Bertrand, E Charbon, ...
Journal of Physics D: Applied Physics 56 (36), 363001, 2023
92023
Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
E Ferraro, M Fanciulli, M De Michielis
Journal of Physics Communications 2 (11), 115022, 2018
82018
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