InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs SR Kurtz, AA Allerman, ED Jones, JM Gee, JJ Banas, BE Hammons
Applied Physics Letters 74 (5), 729-731, 1999
679 1999 Three-dimensional control of light in a two-dimensional photonic crystal slab E Chow, SY Lin, SG Johnson, PR Villeneuve, JD Joannopoulos, ...
Nature 407 (6807), 983-986, 2000
575 2000 Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 µm KD Choquette, JF Klem, AJ Fischer, O Blum, AA Allerman, IJ Fritz, ...
Electronics Letters 36 (16), 1388-1390, 2000
386 2000 Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 2005
351 2005 Band structure of In x Ga 1− x As 1− y N y alloys and effects of pressure ED Jones, NA Modine, AA Allerman, SR Kurtz, AF Wright, ST Tozer, X Wei
Physical Review B 60 (7), 4430, 1999
239 1999 Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels AJ Fischer, AA Allerman, MH Crawford, KHA Bogart, SR Lee, RJ Kaplar, ...
Applied Physics Letters 84 (17), 3394-3396, 2004
234 2004 Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods Y Xi, JQ Xi, T Gessmann, JM Shah, JK Kim, EF Schubert, AJ Fischer, ...
Applied physics letters 86 (3), 2005
233 2005 InGaAsN/GaAs heterojunction for multi-junction solar cells SR Kurtz, AA Allerman, JF Klem, ED Jones
US Patent 6,252,287, 2001
227 2001 Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys AA Allerman, MH Crawford, AJ Fischer, KHA Bogart, SR Lee, ...
Journal of crystal growth 272 (1-4), 227-241, 2004
212 2004 Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen SR Kurtz, AA Allerman, CH Seager, RM Sieg, ED Jones
Applied Physics Letters 77 (3), 400-402, 2000
199 2000 Type-II interband quantum cascade laser at 3.8 [micro sign] m CH Lin, RQ Yang, D Zhang, SJ Murry, SS Pei, AA Allerman, SR Kurtz
Electronics Letters 33 (7), 598, 1997
199 1997 Time-resolved photoluminescence studies of RA Mair, JY Lin, HX Jiang, ED Jones, AA Allerman, SR Kurtz
Applied Physics Letters 76 (2), 188-190, 2000
193 2000 High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser WJ Alford, TD Raymond, AA Allerman
JOSA B 19 (4), 663-666, 2002
183 2002 Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
175 2002 Strain relaxation in AlGaN multilayer structures by inclined dislocations DM Follstaedt, SR Lee, AA Allerman, JA Floro
Journal of Applied Physics 105 (8), 2009
168 2009 Ultra-wide-bandgap AlGaN power electronic devices RJ Kaplar, AA Allerman, AM Armstrong, MH Crawford, JR Dickerson, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3061, 2016
153 2016 Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence DD Koleske, AJ Fischer, AA Allerman, CC Mitchell, KC Cross, SR Kurtz, ...
Applied Physics Letters 81 (11), 1940-1942, 2002
151 2002 An AlN/Al0. 85Ga0. 15N high electron mobility transistor AG Baca, AM Armstrong, AA Allerman, EA Douglas, CA Sanchez, ...
Applied Physics Letters 109 (3), 2016
140 2016 Single-transverse-mode vertical-cavity lasers under continuous and pulsed operation EW Young, KD Choquette, SL Chuang, KM Geib, AJ Fischer, AA Allerman
IEEE Photonics Technology Letters 13 (9), 927-929, 2001
127 2001 Vertical GaN power diodes with a bilayer edge termination JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
124 2015 