LUKE MAWST
LUKE MAWST
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High-power (> 10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
A Al-Muhanna, LJ Mawst, D Botez, DZ Garbuzov, RU Martinelli, ...
Applied Physics Letters 73 (9), 1182-1184, 1998
2391998
8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ...
Applied Physics Letters 69 (11), 1532-1534, 1996
2111996
Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
N Tansu, NJ Kirsch, LJ Mawst
Applied Physics Letters 81 (14), 2523-2525, 2002
2002002
High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers
D Zhou, LJ Mawst
IEEE Journal of Quantum Electronics 38 (12), 1599-1606, 2002
1652002
73% CW power conversion efficiency at 50 W from 970 nm diode laser bars
M Kanskar, T Earles, TJ Goodnough, E Stiers, D Botez, LJ Mawst
Electronics Letters 41 (5), 245-247, 2005
1602005
Narrow spectral width high-power distributed feedback semiconductor lasers
D Botez, TL Earles, LJ Mawst
US Patent 6,195,381, 2001
1552001
Current injection efficiency of InGaAsN quantum-well lasers
N Tansu, LJ Mawst
Journal of applied physics 97 (5), 054502, 2005
1482005
Phase-locked arrays of antiguides: model content and discrimination
D Botez, LJ Mawst, GL Peterson, TJ Roth
IEEE journal of quantum electronics 26 (3), 482-495, 1990
1471990
Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP photodiodes transferred on silicon
P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ...
Applied Physics Letters 94 (1), 012101, 2009
1462009
Low-threshold strain-compensated InGaAs (N)(/spl lambda/= 1.19-1.31 μm) quantum-well lasers
N Tansu, LJ Mawst
IEEE Photonics Technology Letters 14 (4), 444-446, 2002
1382002
High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’waveguides (antiguides)
D Botez, L Mawst, P Hayashida, G Peterson, TJ Roth
Applied physics letters 53 (6), 464-466, 1988
1361988
Determination of location and amount of series compensation to increase power transfer capability
R Rajarman, F Alvarado, A Maniaci, R Camfield, S Jalali
IEEE Transactions on Power Systems 13 (2), 294-300, 1998
1311998
Resonant optical transmission and coupling in phase‐locked diode laser arrays of antiguides: The resonant optical waveguide array
D Botez, LJ Mawst, G Peterson, TJ Roth
Applied physics letters 54 (22), 2183-2185, 1989
1121989
66% CW wallplug efficiency from Al-free 0.98/spl mu/m-emitting diode lasers
D Botez, LJ Mawst, A Bhattacharya, J Lopez, J Li, TF Kuech, VP Iakovlev, ...
Electronics Letters 32 (21), 2012-2013, 1996
1111996
Quantum cascade laser on silicon
A Spott, J Peters, ML Davenport, EJ Stanton, CD Merritt, WW Bewley, ...
Optica 3 (5), 545-551, 2016
1022016
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm
N Tansu, JY Yeh, LJ Mawst
Applied physics letters 82 (23), 4038-4040, 2003
982003
High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/= 1.17 μm) quantum well diode lasers
N Tansu, LJ Mawst
IEEE Photonics Technology Letters 13 (3), 179-181, 2001
972001
Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers
N Tansu, JY Yeh, LJ Mawst
Applied physics letters 83 (13), 2512-2514, 2003
952003
Watt‐range, coherent, uniphase powers from phase‐locked arrays of antiguided diode lasers
D Botez, M Jansen, LJ Mawst, G Peterson, TJ Roth
Applied physics letters 58 (19), 2070-2072, 1991
891991
Experimental evidence of carrier leakage in InGaAsN quantum-well lasers
N Tansu, JY Yeh, LJ Mawst
Applied Physics Letters 83 (11), 2112-2114, 2003
872003
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