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Thirumaleshwara N Bhat
Thirumaleshwara N Bhat
Department of materials science Mangalore university-India
E-mail confirmado em mangaloreuniversity.ac.in
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Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate
A Nigam, TN Bhat, S Rajamani, SB Dolmanan, S Tripathy, M Kumar
AIP Advances 7 (8), 085015, 2017
512017
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ...
Applied Physics Letters 99 (16), 162512, 2011
492011
Sputter grown sub-micrometer thick Cu2ZnSnS4 thin film for photovoltaic device application
GK Dalapati, SK Batabyal, S Masudy-Panah, Z Su, A Kushwaha, TI Wong, ...
Materials Letters 160, 45-50, 2015
472015
Binary group III-nitride based heterostructures: band offsets and transport properties
B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi
Journal of Physics D: Applied Physics 48 (42), 423001, 2015
472015
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy
TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi
Journal of Applied Physics 110 (9), 093718, 2011
282011
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE
M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ...
Materials Research Bulletin 45 (11), 1581-1585, 2010
282010
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction
M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi
Nanoscale research letters 6 (1), 1-6, 2011
272011
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ...
Materials Letters 65 (9), 1396-1399, 2011
242011
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ...
Journal of Applied Physics 109 (4), 044502-044502-5, 2011
242011
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
A Nigam, N Goel, TN Bhat, MT Rahman, SB Dolmanan, Q Qiao, ...
Sensors and Actuators B: Chemical 309, 127832, 2020
232020
Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si
S Arulkumaran, K Ranjan, GI Ng, J Kennedy, PP Murmu, TN Bhat, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
232016
InxAl1-xN/AlN/GaN high electron mobility transistor structures on 200 mm diameter Si (111) substrates with Au-free device processing
S Tripathy, LM Kyaw, SB Dolmanan, YJ Ngoo, Y Liu, MK Bera, SP Singh, ...
ECS Journal of Solid State Science and Technology 3 (5), Q84, 2014
212014
MPA-GSH functionalized AlGaN/GaN high-electron mobility transistor-based sensor for cadmium ion detection
A Nigam, TN Bhat, VS Bhati, SB Dolmanan, S Tripathy, M Kumar
IEEE Sensors Journal 19 (8), 2863-2870, 2019
202019
Droplet epitaxy of InN quantum dots on Si (111) by RF plasma-assisted molecular beam epitaxy
M Kumar, B Roul, TN Bhat, MK Rajpalke, N Sinha, AT Kalghatgi, ...
Advanced Science Letters 3 (4), 379-384, 2010
202010
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015
192015
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015
192015
Structural and optical properties of nonpolar (1 1− 2 0) a-plane GaN grown on (1− 1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
MK Rajpalke, B Roul, M Kumar, TN Bhat, N Sinha, SB Krupanidhi
Scripta Materialia 65 (1), 33-36, 2011
192011
Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy
M Kumar, TN Bhat, MK Rajpalke, B Roul, P Misra, LM Kukreja, N Sinha, ...
Bulletin of Materials Science 33 (3), 221-226, 2010
182010
Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates
TN Bhat, SB Dolmanan, Y Dikme, HR Tan, LK Bera, S Tripathy
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
172014
Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates
WH Tham, DS Ang, LK Bera, SB Dolmanan, TN Bhat, VKX Lin, S Tripathy
IEEE transactions on electron devices 63 (1), 345-352, 2015
162015
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