Thirumaleshwara N Bhat

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Mahesh KUMARAssociate Professor, Indian Institute of Technology JodhpurE-mail confirmado em iitj.ac.in
Basanta RoulSenior Researcher at Central Research Laboratory-BEL and Materials Research Centre-IIScE-mail confirmado em iisc.ac.in
S.B. KrupanidhiIndian institute of scienceE-mail confirmado em mrc.iisc.ernet.in
Mohana RajpalkeSenior Researcher at Microsoft, CopenhagenE-mail confirmado em microsoft.com
Sudhiranjan TripathyAgency for Science, Technology, and Research (A*STAR-IMRE, Singapore)E-mail confirmado em imre.a-star.edu.sg
Dr. L M KukrejaRaja Ramanna Centre for Advanced TechnologyE-mail confirmado em rrcat.gov.in
Dr. Pankaj MisraRaja Ramanna Centre for Advanced Technology & Homi Bhabha National Institute, Indore, INDIAE-mail confirmado em rrcat.gov.in
Dr. Milan Kumar BeraAsstt. Prof. MMDU, Mullana, Haryana, JSPS Postdoc Fellow, Govt. of Japan, TitechE-mail confirmado em mmumullana.org
Dr. KUMUD RANJANNTU, SingaporeE-mail confirmado em e.ntu.edu.sg
Subramaniam ArulkumaranTemasek Laboratories@NTU, Nanyang Technological UniversityE-mail confirmado em ntu.edu.sg
Sundaresan AthinarayananProfessor in Chemistry and Physics of Materials Unit, JNCASRE-mail confirmado em jncasr.ac.in
Dr. Ajay Kumar KushwahaIndian Institute of Technology IndoreE-mail confirmado em iiti.ac.in
Sudip K. BatabyalAssociate Professor, Department of Science, Amrita Vishwa VidyapeethamE-mail confirmado em cb.amrita.edu
Goutam Kumar DalapatiCEO-SunkonnectE-mail confirmado em sunkonnect.co
Saeid Masudy-PanahSingapore-MIT Alliance for Research and TechnologyE-mail confirmado em e.ntu.edu.sg
MANOJ KUMAR CHANDRA MOHANChonnam National University, South KoreaE-mail confirmado em ntu.edu.sg
Dr. B.K. PandeyUniversity of Allahabad, Material Research Centre, Indian Institute of Science, BangloreE-mail confirmado em mrc.iisc.ernet.in
S. Lawrence SelvarajGlobalFoundriesE-mail confirmado em globalfoundries.com
Arjun ShettyPostdoctoral Fellow, Institute for Quantum Computing, University of WaterlooE-mail confirmado em uwaterloo.ca
Charanjit Singh BhatiaNational University of SingaporeE-mail confirmado em nus.edu.sg

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Thirumaleshwara N Bhat

Department of materials science Mangalore university-India

E-mail confirmado em mangaloreuniversity.ac.in

III-Nitrides Materials and Devices


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Effect of self-heating on electrical characteristics of AlGaN/GaN HEMT on Si (111) substrate A Nigam, TN Bhat, S Rajamani, SB Dolmanan, S Tripathy, M Kumar AIP Advances 7 (8), 085015, 2017	51	2017
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films B Roul, MK Rajpalke, TN Bhat, M Kumar, AT Kalghatgi, SB Krupanidhi, ... Applied Physics Letters 99 (16), 162512, 2011	49	2011
Sputter grown sub-micrometer thick Cu2ZnSnS4 thin film for photovoltaic device application GK Dalapati, SK Batabyal, S Masudy-Panah, Z Su, A Kushwaha, TI Wong, ... Materials Letters 160, 45-50, 2015	47	2015
Binary group III-nitride based heterostructures: band offsets and transport properties B Roul, M Kumar, MK Rajpalke, TN Bhat, SB Krupanidhi Journal of Physics D: Applied Physics 48 (42), 423001, 2015	47	2015
Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy TN Bhat, MK Rajpalke, B Roul, M Kumar, SB Krupanidhi Journal of Applied Physics 110 (9), 093718, 2011	28	2011
Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE M Kumar, B Roul, TN Bhat, MK Rajpalke, P Misra, LM Kukreja, N Sinha, ... Materials Research Bulletin 45 (11), 1581-1585, 2010	28	2010
Transport and infrared photoresponse properties of InN nanorods/Si heterojunction M Kumar, TN Bhat, MK Rajpalke, B Roul, AT Kalghatgi, SB Krupanidhi Nanoscale research letters 6 (1), 1-6, 2011	27	2011
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE M Kumar, MK Rajpalke, TN Bhat, B Roul, N Sinha, AT Kalghatgi, ... Materials Letters 65 (9), 1396-1399, 2011	24	2011
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes B Roul, MK Rajpalke, TN Bhat, M Kumar, N Sinha, AT Kalghatgi, ... Journal of Applied Physics 109 (4), 044502-044502-5, 2011	24	2011
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring A Nigam, N Goel, TN Bhat, MT Rahman, SB Dolmanan, Q Qiao, ... Sensors and Actuators B: Chemical 309, 127832, 2020	23	2020
Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on Si S Arulkumaran, K Ranjan, GI Ng, J Kennedy, PP Murmu, TN Bhat, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016	23	2016
InxAl1-xN/AlN/GaN high electron mobility transistor structures on 200 mm diameter Si (111) substrates with Au-free device processing S Tripathy, LM Kyaw, SB Dolmanan, YJ Ngoo, Y Liu, MK Bera, SP Singh, ... ECS Journal of Solid State Science and Technology 3 (5), Q84, 2014	21	2014
MPA-GSH functionalized AlGaN/GaN high-electron mobility transistor-based sensor for cadmium ion detection A Nigam, TN Bhat, VS Bhati, SB Dolmanan, S Tripathy, M Kumar IEEE Sensors Journal 19 (8), 2863-2870, 2019	20	2019
Droplet epitaxy of InN quantum dots on Si (111) by RF plasma-assisted molecular beam epitaxy M Kumar, B Roul, TN Bhat, MK Rajpalke, N Sinha, AT Kalghatgi, ... Advanced Science Letters 3 (4), 379-384, 2010	20	2010
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015	19	2015
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015	19	2015
Structural and optical properties of nonpolar (1 1− 2 0) a-plane GaN grown on (1− 1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy MK Rajpalke, B Roul, M Kumar, TN Bhat, N Sinha, SB Krupanidhi Scripta Materialia 65 (1), 33-36, 2011	19	2011
Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy M Kumar, TN Bhat, MK Rajpalke, B Roul, P Misra, LM Kukreja, N Sinha, ... Bulletin of Materials Science 33 (3), 221-226, 2010	18	2010
Structural and optical properties of Al_xGa_1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates TN Bhat, SB Dolmanan, Y Dikme, HR Tan, LK Bera, S Tripathy Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014	17	2014
Comparison of the Al_xGa_1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates WH Tham, DS Ang, LK Bera, SB Dolmanan, TN Bhat, VKX Lin, S Tripathy IEEE transactions on electron devices 63 (1), 345-352, 2015	16	2015

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