| Drain leakage current evaluation in the diamond SOI nMOSFET at high temperatures M Bellodi, SP Gimenez ECS Transactions 25 (3), 243, 2009 | 14 | 2009 |
| Diamond SOI MOSFET: A new drain and source/channel interface layout to improve drain current SP Gimenez, M Bellodi Int. EUROSOI2009, Goteborg, Sweden 1, 87-88, 2009 | 14 | 2009 |
| Evaluation of the high temperatures influence on high frequency CV curves of MOS capacitor APB Ziliotto, M Bellodi ECS Transactions 41 (6), 163, 2011 | 11 | 2011 |
| Study of high temperature influence on MOS capacitor high frequency CV curves behavior APB Ziliotto, M Bellodi IV Seminatec, São Paulo, 2008 | 9 | 2008 |
| Estudo das componentes e modelagem das correntes de fuga em dispositivos SOI MOSFET operando em altas temperaturas M Bellodi, JA Martino | 6 | 2001 |
| Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures M Bellodi, JA Martino Solid-State Electronics 45 (5), 683-688, 2001 | 4 | 2001 |
| Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices CHS Coelho, JA Martino, M Bellodi, E Simoen, A Veloso, PGD Agopian Microelectronics Journal 117, 105277, 2021 | 3 | 2021 |
| Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13 μm SOI CMOS Technology at High Temperatures LM Almeida, M Bellodi ECS Transactions 9 (1), 397, 2007 | 3 | 2007 |
| Study of the leakage drain current in graded-channel SOI nMOSFETs at high-temperatures M Bellodi¹, JA Martino¹ Silicon-on-insulator Technology and Devices XI: Proceedings of the …, 2003 | 2 | 2003 |
| Using Numerical Simulations to Study and Design Semiconductors Devices in Micro and Nanoelectronics SP Gimenez, M Bellodi Numerical Simulation: From Theory to Industry, 275-288, 2012 | 1 | 2012 |
| Drain leakage current in MuGFETs at high temperatures J Giroldo, M Bellodi ECS Transactions 28 (4), 119, 2010 | 1 | 2010 |
| Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K M Bellodi, LM Almeida ECS Transactions 11 (3), 71, 2007 | 1 | 2007 |
| Simple Analytical Model to Study the ZTC Bias Point in FinFETs M Bellodi, LM Camillo, JAA Martino, E Simoen, C Claeys ECS Transactions 6 (4), 205, 2007 | 1 | 2007 |
| Study of high temperature influence on high frequency CV characteristics of MOS capacitor APB Ziliotto, M Bellodi VII Microelectronics Student Forum, SFORUM, 2007 | 1 | 2007 |
| The electrical-meteorological monitoring conditions in Sao Bernardo do Campo, Sao Paulo state: System in development M Bellodi, M Kawano, RBB Gin, R Bianchi, F Tonidandel, M Romano, ... VIII International Symposium on Lightning Protection 21st-25th November, 2005 | 1 | 2005 |
| The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300° C M Bellodi¹, JA Martino¹ Microelectronics Technology and Devices, SBMICRO 2003: Proceedings of the …, 2003 | 1 | 2003 |
| The Leakage Current Composition In Thin Film SOI nMOSFETs At High Temperatures M Bellodi, JA Martino Microelectronics Technology and Devices, SBMICRO 2002: Proceedings of the …, 2002 | 1 | 2002 |
| Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300° C M Bellodi, B Iniguez, D Flandre, JA Martino International Conference on Microelectronics and Packaging, 2000 | 1 | 2000 |
| Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures M Bellodi, B Iniguez, C Raynaud, D Flandre, JA Martino SBMicro 2000: proceedings, 2000 | 1 | 2000 |
| A novel leakage drain current model for SOI MOSFETs devices at high temperature M Bellodi, JA Martino ICMP 99: Technical Digest, 1999 | 1 | 1999 |
