| Pt gate sink-in process details impact on InP HEMT DC and RF performance T Saranovac, A Hambitzer, DC Ruiz, O Ostinelli, CR Bolognesi IEEE Transactions on Semiconductor Manufacturing 30 (4), 462-467, 2017 | 21 | 2017 |
| InAs channel inset effects on the DC, RF, and noise properties of InP pHEMTs DC Ruiz, T Saranovac, D Han, A Hambitzer, AM Arabhavi, O Ostinelli, ... IEEE Transactions on Electron Devices 66 (11), 4685-4691, 2019 | 12 | 2019 |
| Impact ionization control in 50 nm low-noise high-speed InP HEMTs with InAs channel insets DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi 2019 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2019 | 9 | 2019 |
| Chitin Nanofibrils from Fungi for Hierarchical Gel Polymer Electrolytes for Transient Zinc‐Ion Batteries with Stable Zn Electrodeposition D Ruiz, VF Michel, M Niederberger, E Lizundia Small 19 (45), 2303394, 2023 | 8 | 2023 |
| Low-noise microwave performance of 30 nm GaInAs MOS-HEMTs: Comparison to low-noise HEMTs D Han, DC Ruiz, G Bonomo, T Saranovac, OJS Ostinelli, CR Bolognesi IEEE Electron Device Letters 41 (9), 1320-1323, 2020 | 7 | 2020 |
| Effects of electrochemical etching on InP HEMT fabrication T Saranovac, DC Ruiz, D Han, AM Arabhavi, O Ostinelli, CR Bolognesi IEEE Transactions on Semiconductor Manufacturing 32 (4), 496-501, 2019 | 7 | 2019 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3549-3556, 2022 | 3 | 2022 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS= 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3542-3548, 2022 | 2 | 2022 |
| New GaInAs/InAs/InP composite channels for mm-wave low-noise InP HEMTs DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 2 | 2019 |
| Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing D Calvo Ruiz, C Sileno Materials Science Forum 1062, 155-159, 2022 | 1 | 2022 |
| Boosting SiC throughput DDC Ruiz Compound Semiconductor Magazine 27 (6), 40-43, 2021 | | 2021 |
| Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance D Calvo Ruiz, D Han, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi physica status solidi (a) 218 (3), 2000191, 2021 | | 2021 |
| InP High Electron Mobility Transistors with InAs-based Channels for High Frequency and Low Noise Applications DC Ruiz ETH Zurich, 2020 | | 2020 |
| Gate Recess Etch Sensitivity of Thick and Highly-Doped GaInAs Cap Layer in InP HEMT Fabrication D Han, DC Ruiz, T Saranovac, O Ostinelli, CR Bolognesi CS MANTECH 2020 Digest of Papers, 145-147, 2020 | | 2020 |
| Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique P López, DC Ruiz, I Santos, M Aboy, LA Marqués, M Trochet, ... 2017 Spanish Conference on Electron Devices (CDE), 2017 | | 2017 |
| Characterization and dynamics of Si self-interstitial clusters by self-learning kinetic Monte Carlo simulations DC Ruiz, P López 2016 European School on Molecular Nanoscience (ESMolNa), 2016 | | 2016 |
| Characterization and dynamics of Si self-interstitial clusters by self-learning kinetic Monte Carlo simulations D Calvo Ruiz | | 2016 |
| Simulación de defectos en germanio amorfo D Calvo Ruiz | | 2015 |
