Victor Bratus
Victor Bratus
leading researcher, V. Lashkaryov Institute of Semiconductor Physics NASU
E-mail confirmado em isp.kiev.ua
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The carbon⟨ 100⟩ split interstitial in SiC
TT Petrenko, TL Petrenko, VY Bratus
Journal of Physics: Condensed Matter 14 (47), 12433, 2002
602002
Optical and electron paramagnetic resonance study of light-emitting ion implanted silicon dioxide layers
MY Valakh, VA Yukhimchuk, VY Bratus’, AA Konchits, PLF Hemment, ...
Journal of applied physics 85 (1), 168-173, 1999
591999
Structural transformations and silicon nanocrystallite formation in SiOx films
VY Bratus, VA Yukhimchuk, LI Berezhinsky, MY Valakh, IP Vorona, ...
Semiconductors 35 (7), 821-826, 2001
342001
Positively charged carbon vacancy in three inequivalent lattice sites of : Combined EPR and density functional theory study
VY Bratus, TT Petrenko, SM Okulov, TL Petrenko
Physical Review B 71 (12), 125202, 2005
322005
’, VA Yukhimchuk, LI Berezhinsky, M. Ya. Valakh, IP Vorona, IZ Indutnyi, TT Petrenko, PE Shepeliavyi, and IB Yanchuk
VY Bratus
Semiconductors 35 (7), 821, 2001
272001
Positively charged carbon vacancy in 6H–SiC: EPR study
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Physica B: Condensed Matter 308, 621-624, 2001
262001
EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Materials Science Forum 353, 517-520, 2001
202001
Calculation of hyperfine parameters of positively charged carbon vacancy in SiC
TT Petrenko, TL Petrenko, VY Bratus, JL Monge
Physica B: Condensed Matter 308, 637-640, 2001
182001
’, AA Bugai, VS Vikhnin, AA Klimov, VM Maksimenko, TL Petrenko, and VV Romanenko
NP Baran, VY Bratus
Phys. Solid State 35, 1544, 1993
181993
A new spin one defect in cubic SiC
VY Bratus, RS Melnik, SM Okulov, VN Rodionov, BD Shanina, MI Smoliy
Physica B: Condensed Matter 404 (23-24), 4739-4741, 2009
172009
Spin-lattice relaxation of nitrogen jahn-teller center in diamond
IM Zaritskii, VY Bratus, VS Vikhnin, AS Vishnevskii, AA Konchits, ...
FIZIKA TVERDOGO TELA 18 (11), 3226-3230, 1976
171976
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
VY Bratus, MY Valakh, IP Vorona, TT Petrenko, VA Yukhimchuk, ...
Journal of luminescence 80 (1-4), 269-273, 1998
141998
EPR and ENDOR study of the center in porous silicon
VY Bratus, SS Ishchenko, SM Okulov, IP Vorona, HJ von Bardeleben, ...
Physical Review B 50 (20), 15449, 1994
131994
Vacancy-related defects in ion-beam and electron irradiated 6H–SiC
VY Bratus, TT Petrenko, HJ Von Bardeleben, EV Kalinina, A Hallén
Applied surface science 184 (1-4), 229-236, 2001
122001
Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment
VA Dan'ko, VY Bratus, IZ Indutnyi, IP Lisovskyy, SO Zlobin, ...
Semiconductor physics quantum electronics & optoelectronics, 413-417, 2010
112010
’, AA Konchits, PLF Hemment, and T. Komoda
MY Valakh, VA Yukhimchuk, VY Bratus
J. Appl. Phys 85, 168, 1999
111999
EPR AND SPIN RELAXATION OF DEEP CENTERS IN SEMICONDUCTORS IN PRESENCE OF PHOTOELECTRONS (SI-FE0)
MF Deigen, VY Bratus, BE Vugmeister, IM Zaritskii, AA Zolotukhin, ...
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI 69 (6), 2110-2117, 1975
111975
’, VA Yukhymchuk, LI Berezhynsky et al., Structural transformations and formation of silicon nanocrystals in SiOx films
VY Bratus
Semiconductors 35, 854-859, 2001
102001
Structural, electrical and optical properties of bulk 4h and 6h p-type sic
EV Kalinina, AS Zubrilov, NI Kuznetsov, IP Nikitina, AS Tregubova, ...
Materials Science Forum 338, 497-500, 2000
102000
Functionalization of 2D macroporous silicon under the high-pressure oxidation
L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ...
Applied Surface Science 434, 142-147, 2018
92018
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