The carbon⟨ 100⟩ split interstitial in SiC TT Petrenko, TL Petrenko, VY Bratus
Journal of Physics: Condensed Matter 14 (47), 12433, 2002
67 2002 Optical and electron paramagnetic resonance study of light-emitting MY Valakh, VA Yukhimchuk, VY Bratus’, AA Konchits, PLF Hemment, ...
Journal of applied physics 85 (1), 168-173, 1999
62 1999 Structural transformations and silicon nanocrystallite formation in SiOx films VY Bratus’, VA Yukhimchuk, LI Berezhinsky, MY Valakh, IP Vorona, ...
Semiconductors 35, 821-826, 2001
37 2001 Positively charged carbon vacancy in three inequivalent lattice sites of VY Bratus, TT Petrenko, SM Okulov, TL Petrenko
Physical Review B 71 (12), 125202, 2005
35 2005 ’, VA Yukhimchuk, LI Berezhinsky, M. Ya. Valakh, IP Vorona, IZ Indutnyi, TT Petrenko, PE Shepeliavyi, and IB Yanchuk VY Bratus
Semiconductors 35, 763, 2001
33 2001 Functionalization of 2D macroporous silicon under the high-pressure oxidation L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ...
Applied Surface Science 434, 142-147, 2018
27 2018 Positively charged carbon vacancy in 6H–SiC: EPR study VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Physica B: Condensed Matter 308, 621-624, 2001
25 2001 A new spin one defect in cubic SiC VY Bratus, RS Melnik, SM Okulov, VN Rodionov, BD Shanina, MI Smoliy
Physica B: Condensed Matter 404 (23-24), 4739-4741, 2009
23 2009 EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Materials Science Forum 353, 2001
21 2001 ’, AA Bugai, VS Vikhnin, AA Klimov, VM Maksimenko, TL Petrenko, and VV Romanenko NP Baran, VY Bratus
Phys. Solid State 35, 1544, 1993
21 1993 Calculation of hyperfine parameters of positively charged carbon vacancy in SiC TT Petrenko, TL Petrenko, VY Bratus, JL Monge
Physica B: Condensed Matter 308, 637-640, 2001
20 2001 Spin-lattice relaxation of the Jahn-Teller nitrogen center in diamond IM Zaritskii, VY Bratus, VS Vikhnin, AA Konchits
17 1976 Vacancy-related defects in ion-beam and electron irradiated 6H–SiC VY Bratus, TT Petrenko, HJ Von Bardeleben, EV Kalinina, A Hallén
Applied surface science 184 (1-4), 229-236, 2001
14 2001 Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment VA Dan'ko, VY Bratus, IZ Indutnyi, IP Lisovskyy, SO Zlobin, ...
Semiconductor physics, quantum electronics & optoelectronics, 413-417, 2010
13 2010 Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers VY Bratus, MY Valakh, IP Vorona, TT Petrenko, VA Yukhimchuk, ...
Journal of luminescence 80 (1-4), 269-273, 1998
13 1998 EPR and ENDOR study of the VY Bratus, SS Ishchenko, SM Okulov, IP Vorona, HJ Von Bardeleben, ...
Physical Review B 50 (20), 15449, 1994
13 1994 Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis DI Bletskan, VY Bratus’, AR Luk’yanchuk, VT Maslyuk, OA Parlag
Technical Physics Letters 34, 612-614, 2008
12 2008 Structural, electrical and optical properties of bulk 4H and 6H p-type SiC EV Kalinina, AS Zubrilov, NI Kuznetsov, IP Nikitina, AS Tregubova, ...
Materials Science Forum 338, 497-500, 2000
12 2000 EPR AND SPIN RELAXATION OF DEEP CENTERS IN SEMICONDUCTORS IN PRESENCE OF PHOTOELECTRONS (SI-FE0) MF Deigen, VY Bratus, BE Vugmeister, IM Zaritskii, AA Zolotukhin, ...
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI 69 (6), 2110-2117, 1975
12 1975 EPR AND SPIN RELAXATION OF DEEP CENTERS IN SEMICONDUCTORS IN PRESENCE OF PHOTOELECTRONS (SI-FE0) MF Deigen, VY Bratus, BE Vugmeister, IM Zaritskii, AA Zolotukhin, ...
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI 69 (6), 2110-2117, 1975
12 1975 