Anindya Nath
Anindya Nath
Globalfoundries, US Naval Research Lab
E-mail confirmado em gmu.edu
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Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
592017
Microwave annealing of very high dose aluminum-implanted 4H-SiC
R Nipoti, A Nath, MV Rao, A Hallén, A Carnera, YL Tian
Applied Physics Express 4 (11), 111301, 2011
352011
Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
A Nath, AD Koehler, GG Jernigan, VD Wheeler, JK Hite, SC Hernández, ...
Applied Physics Letters 104 (22), 224102, 2014
302014
Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene
KM Daniels, MM Jadidi, AB Sushkov, A Nath, AK Boyd, K Sridhara, ...
2D Mater 4 (2), 25034, 2017
212017
Remarks on the room temperature impurity band conduction in heavily Al+ implanted 4H-SiC
A Parisini, M Gorni, A Nath, L Belsito, MV Rao, R Nipoti
Journal of Applied Physics 118 (3), 035101, 2015
212015
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ...
Surface and Coatings Technology 241, 8-12, 2014
192014
Vertical GaN junction barrier Schottky diodes
AD Koehler, TJ Anderson, MJ Tadjer, A Nath, BN Feigelson, DI Shahin, ...
ECS Journal of Solid State Science and Technology 6 (1), Q10, 2016
182016
Functionalized graphene as a model system for the two-dimensional metal-insulator transition
MS Osofsky, SC Hernández, A Nath, VD Wheeler, SG Walton, CM Krowne, ...
Scientific reports 6, 19939, 2016
182016
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
A Nath, MV Rao, F Moscatelli, M Puzzanghera, F Mancarella, R Nipoti
2014 20th International Conference on Ion Implantation Technology (IIT), 1-4, 2014
182014
High-dose phosphorus-implanted 4H-SiC: Microwave and conventional post-implantation annealing at temperatures≥ 1700° C
R Nipoti, A Nath, SB Qadri, YL Tian, C Albonetti, A Carnera, MV Rao
Journal of electronic materials 41 (3), 457-465, 2012
182012
Impact of surface treatments on high-κ dielectric integration with Ga-polar and N-polar GaN
CR English, VD Wheeler, NY Garces, N Nepal, A Nath, JK Hite, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
172014
Ultra-broadband photodetectors based on epitaxial graphene quantum dots
A El Fatimy, A Nath, BD Kong, AK Boyd, RL Myers-Ward, KM Daniels, ...
Nanophotonics 7 (4), 735-740, 2018
122018
Challenges to graphene growth on SiC (0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient
ZR Robinson, GG Jernigan, M Currie, JK Hite, KM Bussmann, LO Nyakiti, ...
Carbon 81, 73-82, 2015
122015
Electrochemically prepared polycrystalline copper surface for the growth of hexagonal boron nitride
K Sridhara, BN Feigelson, JA Wollmershauser, JK Hite, A Nath, ...
Crystal Growth & Design 17 (4), 1669-1678, 2017
102017
Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication
A Nath, MV Rao, YL Tian, A Parisini, R Nipoti
Journal of electronic materials 43 (4), 843-849, 2014
102014
Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
VR Anderson, N Nepal, SD Johnson, ZR Robinson, A Nath, AC Kozen, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35 (3 …, 2017
92017
Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates
TJ Anderson, AD Koehler, MJ Tadjer, JK Hite, A Nath, NA Mahadik, ...
Applied Physics Express 10 (12), 126501, 2017
82017
In search of quantum-limited contact resistance: understanding the intrinsic and extrinsic effects on the graphene–metal interface
A Nath, M Currie, AK Boyd, VD Wheeler, AD Koehler, MJ Tadjer, ...
2D Materials 3 (2), 025013, 2016
82016
Electrothermal evaluation of AlGaN/GaN membrane high electron mobility transistors by transient thermoreflectance
MJ Tadjer, PE Raad, PL Komarov, KD Hobart, TI Feygelson, AD Koehler, ...
IEEE Journal of the Electron Devices Society 6, 922-930, 2018
62018
Effect of surface passivation and substrate on proton irradiated AlGaN/GaN HEMT transport properties
JC Gallagher, TJ Anderson, AD Koehler, NA Mahadik, A Nath, BD Weaver, ...
ECS Journal of Solid State Science and Technology 6 (11), S3060, 2017
62017
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