| Diagonal-transition quantum cascade detector P Reininger, B Schwarz, H Detz, D MacFarland, T Zederbauer, ... Applied Physics Letters 105 (9), 2014 | 66 | 2014 |
| A multi-purpose Schrödinger-Poisson solver for TCAD applications M Karner, A Gehring, S Holzer, M Pourfath, M Wagner, W Goes, ... Journal of Computational Electronics 6, 179-182, 2007 | 53 | 2007 |
| A bi-functional quantum cascade device for same-frequency lasing and detection B Schwarz, P Reininger, H Detz, T Zederbauer, A Maxwell Andrews, ... Applied Physics Letters 101 (19), 2012 | 52 | 2012 |
| VSP—a quantum-electronic simulation framework O Baumgartner, Z Stanojevic, K Schnass, M Karner, H Kosina Journal of Computational Electronics 12, 701-721, 2013 | 46 | 2013 |
| Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations M Karner, O Baumgartner, Z Stanojević, F Schanovsky, G Strof, ... 2016 IEEE International Electron Devices Meeting (IEDM), 30.7. 1-30.7. 4, 2016 | 33 | 2016 |
| A multi scale modeling approach to non-radiative multi phonon transitions at oxide defects in MOS structures F Schanovsky, O Baumgartner, V Sverdlov, T Grasser Journal of Computational Electronics 11, 218-224, 2012 | 26 | 2012 |
| Physical modeling-A new paradigm in device simulation Z Stanojevic, O Baumgartner, F Mitterbauer, H Demel, C Kernstock, ... 2015 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2015 | 25 | 2015 |
| Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs D Osintsev, O Baumgartner, Z Stanojevic, V Sverdlov, S Selberherr Solid-state electronics 90, 34-38, 2013 | 21 | 2013 |
| Nano device simulator—a practical subband-BTE solver for path-finding and DTCO Z Stanojević, CM Tsai, G Strof, F Mitterbauer, O Baumgartner, C Kernstock, ... IEEE Transactions on Electron Devices 68 (11), 5400-5406, 2021 | 16 | 2021 |
| Modeling of modern MOSFETs with strain V Sverdlov, O Baumgartner, T Windbacher, S Selberherr Journal of computational electronics 8, 192-208, 2009 | 15 | 2009 |
| Consistent low-field mobility modeling for advanced MOS devices Z Stanojević, O Baumgartner, L Filipović, H Kosina, M Karner, ... Solid-State Electronics 112, 37-45, 2015 | 14 | 2015 |
| Optimization and benchmarking FinFETs and GAA nanosheet architectures at 3-nm technology node: Impact of unique boosters KK Bhuwalka, H Wu, W Zhao, G Rzepa, O Baumgartner, F Benistant, ... IEEE Transactions on Electron Devices 69 (8), 4088-4094, 2022 | 13 | 2022 |
| Understanding the ISPP slope in charge trap flash memory and its impact on 3-D NAND scaling D Verreck, A Arreghini, F Schanovsky, G Rzepa, Z Stanojevic, ... 2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021 | 13 | 2021 |
| Phase-space solution of the subband Boltzmann transport equation for nano-scale TCAD Z Stanojević, M Karner, O Baumgartner, HW Karner, C Kernstock, ... 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 13 | 2016 |
| Understanding correlated drain and gate current fluctuations W Gös, M Toledano-Luque, O Baumgartner, M Bina, F Schanovsky, ... Proceedings of the 20th IEEE International Symposium on the Physical and …, 2013 | 13 | 2013 |
| Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence C Maneux, C Mukherjee, M Deng, M Dubourg, L Réveil, G Bordea, ... 2021 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2021 | 12 | 2021 |
| Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field N Neophytou, O Baumgartner, Z Stanojevic, H Kosina Solid-state electronics 90, 44-50, 2013 | 12 | 2013 |
| A detailed evaluation of model defects as candidates for the bias temperature instability F Schanovsky, O Baumgartner, W Goes, T Grasser 2013 International Conference on Simulation of Semiconductor Processes and …, 2013 | 12 | 2013 |
| Modeling of high-k-Metal-Gate-stacks using the non-equilibrium Green’s function formalism O Baumgartner, M Karner, H Kosina 2008 International Conference on Simulation of Semiconductor Processes and …, 2008 | 12 | 2008 |
| Reliability and variability-aware DTCO flow: Demonstration of projections to n3 FinFET and nanosheet technologies G Rzepa, M Karner, O Baumgartner, G Strof, F Schanovsky, F Mitterbauer, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 10 | 2021 |
