Subramaniam Arulkumaran
Subramaniam Arulkumaran
Temasek Laboratories@NTU, Nanyang Technological University
E-mail confirmado em ntu.edu.sg
Título
Citado por
Citado por
Ano
Investigations of and insulator–semiconductor interfaces with low interface state density
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, M Umeno
Applied Physics Letters 73 (6), 809-811, 1998
2411998
Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with and silicon oxynitride
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, Y Sano
Applied Physics Letters 84 (4), 613-615, 2004
2402004
Characterization of different-Al-content heterostructures and high-electron-mobility transistors on sapphire
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
1242003
Enhancement of breakdown voltage by AlN buffer layer thickness in high-electron-mobility transistors on diameter silicon
S Arulkumaran, T Egawa, S Matsui, H Ishikawa
Applied Physics Letters 86 (12), 123503, 2005
1222005
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al 2 O …
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 223501, 2009
1202009
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 113506, 2011
1182011
High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Applied physics letters 80 (12), 2186-2188, 2002
1162002
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 082110, 2012
1122012
Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Applied physics letters 82 (18), 3110-3112, 2003
902003
Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes
S Arulkumaran, T Egawa, H Ishikawa, M Umeno, T Jimbo
IEEE Transactions on Electron Devices 48 (3), 573-580, 2001
882001
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
S Arulkumaran, M Sakai, T Egawa, H Ishikawa, T Jimbo, T Shibata, K Asai, ...
Applied physics letters 81 (6), 1131-1133, 2002
792002
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
772012
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 142109, 2013
732013
Temperature-dependent forward gate current transport in atomic-layer-deposited metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 163501, 2011
732011
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to
ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 142105, 2009
712009
Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Applied physics letters 81 (16), 3073-3075, 2002
682002
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
672009
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
642007
Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa
physica status solidi (a) 202 (2), R16-R18, 2005
632005
Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
622011
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20