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Justin C Goodrich
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Band alignment of ScAlN/GaN heterojunction
H Fu, JC Goodrich, N Tansu
Applied Physics Letters 117 (23), 2020
102020
Band anti-crossing model in dilute-As GaNAs alloys
JC Goodrich, D Borovac, CK Tan, N Tansu
Scientific Reports 9 (1), 5128, 2019
102019
Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes
H Fu, JC Goodrich, O Ogidi-Ekoko, N Tansu
Journal of Applied Physics 126 (13), 2019
92019
Electrical properties of MgO/GaN metal-oxide-semiconductor structures
ON Ogidi-Ekoko, JC Goodrich, AJ Howzen, MR Peart, NC Strandwitz, ...
Solid-State Electronics 172, 107881, 2020
82020
Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition
JC Goodrich, TG Farinha, L Ju, AJ Howzen, A Kundu, ON Ogidi-Ekoko, ...
Journal of Crystal Growth 536, 125568, 2020
72020
Gain characteristics of InGaN quantum wells with AlGaInN barriers
H Fu, W Sun, O Ogidi-Ekoko, JC Goodrich, N Tansu
AIP Advances 9 (4), 2019
52019
Power electronics figure-of-merit of ScAlN
H Fu, JC Goodrich, O Ogidi-Ekoko, N Tansu
Applied Physics Letters 119 (7), 2021
42021
Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters
W Sun, H Fu, D Borovac, JC Goodrich, CK Tan, N Tansu
IEEE Journal of Quantum Electronics 58 (2), 1-6, 2022
12022
Prospects for hole doping in dilute-anion III-nitrides
JC Goodrich, CK Tan, D Borovac, N Tansu
Applied Physics Letters 118 (7), 2021
12021
Imaging of X-ray Pairs in a Spontaneous Parametric Down-Conversion Process
JC Goodrich, R Mahon, J Hanrahan, M Dziubelski, RA Abrahao, ...
arXiv preprint arXiv:2310.13078, 2023
2023
Gain Properties of Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers
H Fu, W Sun, JC Goodrich, D Borovac, CK Tan, N Tansu
2021 IEEE Photonics Conference (IPC), 1-2, 2021
2021
Band structures and heterojunction alignment of ScAlN alloy
H Fu, JC Goodrich, N Tansu
Gallium Nitride Materials and Devices XVI 11686, 1168623, 2021
2021
Efficient hole-doping in dilute-anion III-nitrides
JC Goodrich, D Borovac, CK Tan, N Tansu
Gallium Nitride Materials and Devices XVI 11686, 116861O, 2021
2021
Dilute-As InGaNAs quantum wells for red-emitting laser active regions
H Fu, W Sun, JC Goodrich, D Borovac, N Tansu
Novel In-Plane Semiconductor Lasers XX 11705, 117050F, 2021
2021
Dilute-Impurity III-Nitride Semiconductor Band Structure Modelling and Novel Oxide Dielectrics
JC Goodrich
Lehigh University, 2021
2021
Band Alignment of Nearly Lattice-Matched ScAlN/GaN Heterojunction
H Fu, JC Goodrich, N Tansu
2020 IEEE Photonics Conference (IPC), 1-2, 2020
2020
p-type Doping of Dilute-Anion III-Nitride Materials
JC Goodrich, D Borovac, CK Tan, N Tansu
2020 IEEE Photonics Conference (IPC), 1-2, 2020
2020
Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)
J Goodrich, ON Ogidi-Ekoko, T Farinha, A Howzen, A Kundu, JJ Wierer, ...
Oxide-based Materials and Devices XI 11281, 112811R, 2020
2020
Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)
J Goodrich, H Fu, D Borovac, N Tansu
Gallium Nitride Materials and Devices XV 11280, 1128005, 2020
2020
InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)
H Fu, D Borovac, J Goodrich, O Ogidi-Ekoko, N Tansu
Novel In-Plane Semiconductor Lasers XIX 11301, 1130103, 2020
2020
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