Particle removal method for a substrate transfer mechanism and apparatus T Moriya, H Nakayama, K Okuyama, M Shimada US Patent 7,748,138, 2010 | 324 | 2010 |
Atmospheric transfer chamber, processed object transfer method, program for performing the transfer method, and storage medium storing the program T Moriya, T Hirooka, A Shimizu, S Tanaka US Patent App. 11/376,163, 2006 | 125 | 2006 |
Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles N Ito, F Uesugi, T Moriya US Patent 6,184,489, 2001 | 101 | 2001 |
Internal member of a plasma processing vessel K Mitsuhashi, H Nakayama, N Nagayama, T Moriya, H Nagaike US Patent 7,780,786, 2010 | 98 | 2010 |
Plasma processing apparatus, ring member and plasma processing method Y Sasaki, T Moriya, H Nagaike US Patent App. 10/773,245, 2005 | 93 | 2005 |
Reduction of particle contamination in plasma-etching equipment by dehydration of chamber wall N Ito, T Moriya, F Uesugi, M Matsumoto, S Liu, Y Kitayama Japanese journal of applied physics 47 (5R), 3630, 2008 | 91 | 2008 |
Real-time monitoring of scattered laser light by a single particle of several tens of nanometers in the etching chamber in relation to its status with the equipment F Uesugi, N Ito, T Moriya, H Doi, S Sakamoto, Y Hayashi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998 | 53 | 1998 |
Particle removal apparatus and method and plasma processing apparatus T Moriya, H Nagaike US Patent 7,651,586, 2010 | 49 | 2010 |
Substrate processing apparatus and substrate transferring method K Tezuka, H Koizumi, T Moriya, H Nakayama US Patent 7,299,104, 2007 | 46 | 2007 |
Annealing properties of defects in B+-and F+-implanted Si studied using monoenergetic positron beams A Uedono, T Kitano, K Hamada, T Moriya, T Kawano, S Tanigawa, ... Japanese journal of applied physics 36 (5R), 2571, 1997 | 44 | 1997 |
Plasma processing apparatus, abnormal discharge detecting method for the same, program for implementing the method, and storage medium storing the program T Moriya US Patent App. 11/259,038, 2006 | 43 | 2006 |
Particle reduction and control in plasma etching equipment T Moriya, H Nakayama, H Nagaike, Y Kobayashi, M Shimada, K Okuyama IEEE transactions on semiconductor manufacturing 18 (4), 477-486, 2005 | 42 | 2005 |
Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process T Moriya, N Ito, F Uesugi, Y Hayashi, K Okamura Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4 …, 2000 | 37 | 2000 |
Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method N Ito, T Moriya, F Uesugi, H Doi, S Sakamoto, Y Hayashi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 31 | 1998 |
Capture of flaked particles during plasma etching by a negatively biased electrode T Moriya, N Ito, F Uesugi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 30 | 2004 |
Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P+-implanted Si studied using monoenergetic positron beams A Uedono, T Kitano, M Watanabe, T Moriya, T Kawano, S Tanigawa, ... Japanese journal of applied physics 35 (4R), 2000, 1996 | 30 | 1996 |
Particle removal apparatus and method and plasma processing apparatus T Moriya, H Nagaike US Patent 8,052,798, 2011 | 28 | 2011 |
Gas supply member and plasma processing apparatus T Moriya, T Murakami US Patent 7,416,635, 2008 | 28 | 2008 |
Defects in Ion-Implanted 3C–SiC Probed by a Monoenergetic Positron Beam A Uedono, H Itoh, T Ohshima, Y Aoki, M Yoshikawa, I Nashiyama, ... Japanese journal of applied physics 35 (12R), 5986, 1996 | 28 | 1996 |
Substrate cleaning apparatus and method T Moriya, H Nakayama US Patent 7,628,864, 2009 | 27 | 2009 |