Martin Stutzmann
Martin Stutzmann
Professor für Physik, Walter Schottky Institut, Technische Universität München
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation
MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona
Solid State Communications 81 (4), 307-312, 1992
Optical constants of epitaxial AlGaN films and their temperature dependence
D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
Protein-modified nanocrystalline diamond thin films for biosensor applications
A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ...
Nature materials 3 (10), 736-742, 2004
Black nonreflecting silicon surfaces for solar cells
S Koynov, MS Brandt, M Stutzmann
Applied physics letters 88 (20), 203107, 2006
The defect density in amorphous silicon
M Stutzmann
Philosophical Magazine B 60 (4), 531-546, 1989
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
MK Kelly, RP Vaudo, VM Phanse, L Görgens, O Ambacher, M Stutzmann
Japanese journal of applied physics 38 (3A), L217, 1999
Determination of the Al mole fraction and the band gap bowing of epitaxial films
H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ...
Applied Physics Letters 71 (11), 1504-1506, 1997
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
M Stutzmann, DK Biegelsen, RA Street
Physical Review B 35 (11), 5666, 1987
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff
Applied Physics Letters 83 (1), 177-179, 2003
Sound velocity of thin films obtained by surface acoustic-wave measurements
C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ...
Applied Physics Letters 72 (19), 2400-2402, 1998
Chemical control of the charge state of nitrogen-vacancy centers in diamond
MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ...
Physical Review B 83 (8), 081304, 2011
Electronic properties of semiconducting FeSi2 films
CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ...
Journal of applied physics 68 (4), 1726-1734, 1990
Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied physics letters 68 (7), 970-972, 1996
Optical process for liftoff of group III-nitride films
MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
Physica Status Solidi A (Applied Research) 159, 1997
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