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Xiabing Lou
Xiabing Lou
E-mail confirmado em fas.harvard.edu - Página inicial
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Efficient and Clean Gold‐Catalyzed One‐Pot Selective N‐Alkylation of Amines with Alcohols
L He, XB Lou, J Ni, YM Liu, Y Cao, HY He, KN Fan
Chemistry–A European Journal 16 (47), 13965-13969, 2010
1872010
Highly chemo‐and regioselective transfer reduction of aromatic nitro compounds using ammonium formate catalyzed by supported gold nanoparticles
XB Lou, L He, Y Qian, YM Liu, Y Cao, KN Fan
Advanced Synthesis & Catalysis 353 (2‐3), 281-286, 2011
1222011
A novel gold-catalyzed chemoselective reduction of α, β-unsaturated aldehydes using CO and H 2 O as the hydrogen source
L He, FJ Yu, XB Lou, Y Cao, HY He, KN Fan
Chemical communications 46 (9), 1553-1555, 2010
592010
High-performance InAlN/GaN MOSHEMTs enabled by atomic layer epitaxy MgCaO as gate dielectric
H Zhou, X Lou, NJ Conrad, M Si, H Wu, S Alghamdi, S Guo, RG Gordon, ...
IEEE Electron Device Letters 37 (5), 556-559, 2016
562016
Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices
X Wang, OI Saadat, B Xi, X Lou, RJ Molnar, T Palacios, RG Gordon
Applied Physics Letters 101 (23), 2012
512012
Epitaxial Growth of MgxCa1–xO on GaN by Atomic Layer Deposition
X Lou, H Zhou, SB Kim, S Alghamdi, X Gong, J Feng, X Wang, PD Ye, ...
Nano letters 16 (12), 7650-7654, 2016
392016
Synthesis of calcium (II) amidinate precursors for atomic layer deposition through a redox reaction between calcium and amidines
SB Kim, C Yang, T Powers, LM Davis, X Lou, RG Gordon
Angewandte Chemie International Edition 55 (35), 10228-10233, 2016
372016
DC and RF performance of AlGaN/GaN/SiC MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric
H Zhou, X Lou, K Sutherlin, J Summers, SB Kim, KD Chabak, RG Gordon, ...
IEEE Electron Device Letters 38 (10), 1409-1412, 2017
362017
Enhancement-mode AlGaN/GaN fin-MOSHEMTs on Si substrate with atomic layer epitaxy MgCaO
H Zhou, X Lou, SB Kim, KD Chabak, RG Gordon, DY Peide
IEEE Electron Device Letters 38 (9), 1294-1297, 2017
222017
Direct-liquid-evaporation chemical vapor deposition of nanocrystalline cobalt metal for nanoscale copper interconnect encapsulation
J Feng, X Gong, X Lou, RG Gordon
ACS applied materials & interfaces 9 (12), 10914-10920, 2017
202017
Total-ionizing-dose responses of GaN-based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric
MA Bhuiyan, H Zhou, SJ Chang, X Lou, X Gong, R Jiang, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 46-52, 2017
172017
Study of the crystal structure of SnS thin films by atomic layer deposition
X Zhao, LM Davis, X Lou, SB Kim, S Uličná, A Jayaraman, C Yang, ...
AIP Advances 11 (3), 2021
142021
InGaAs 3D MOSFETs with drastically different shapes formed by anisotropic wet etching
J Zhang, M Si, XB Lou, W Wu, RG Gordon, PD Ye
2015 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2015
132015
III–V CMOS devices and circuits with high-quality atomic-layer-epitaxial La2O3/GaAs interface
L Dong, XW Wang, JY Zhang, XF Li, XB Lou, N Conrad, H Wu, ...
2014 Symposium on VLSI technology (VLSI-Technology): digest of technical …, 2014
132014
Band-Offset Analysis of Atomic Layer Deposition La2O3 on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth
X Lou, X Gong, J Feng, R Gordon
ACS applied materials & interfaces 11 (31), 28515-28519, 2019
102019
Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate
J Zhang, X Lou, M Si, H Wu, J Shao, MJ Manfra, RG Gordon, PD Ye
Applied Physics Letters 106 (7), 2015
92015
Atomic layer deposition of cubic tin–calcium sulfide alloy films
C Yang, X Zhao, SB Kim, LT Schelhas, X Lou, RG Gordon
Journal of Materials Research 35 (7), 795-803, 2020
72020
Total ionizing dose (TID) effects in GaAs MOSFETs with La-based epitaxial gate dielectrics
S Ren, MA Bhuiyan, J Zhang, X Lou, M Si, X Gong, R Jiang, K Ni, X Wan, ...
IEEE Transactions on Nuclear Science 64 (1), 164-169, 2016
42016
InAs gate-all-around nanowire MOSFETs by top-down approach
H Wu, XB Lou, M Si, JY Zhang, RG Gordon, V Tokranov, S Oktyabrsky, ...
72nd Device Research Conference, 213-214, 2014
32014
ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis
X Gong, X Lou, SB Kim, RG Gordon
ACS Applied Electronic Materials 3 (2), 845-853, 2021
22021
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