| Nanocellulose‐MXene Biomimetic Aerogels with Orientation‐Tunable Electromagnetic Interference Shielding Performance Z Zeng, C Wang, G Siqueira, D Han, A Huch, S Abdolhosseinzadeh, ... Advanced Science, 2000979, 2020 | 331 | 2020 |
| Ultralight, flexible, and biomimetic nanocellulose/silver nanowire aerogels for electromagnetic interference shielding Z Zeng, T Wu, D Han, Q Ren, G Siqueira, G Nyström Acs Nano 14 (3), 2927-2938, 2020 | 272 | 2020 |
| Flexible and ultrathin waterproof cellular membranes based on high‐conjunction metal‐wrapped polymer nanofibers for electromagnetic interference shielding Z Zeng, F Jiang, Y Yue, D Han, L Lin, S Zhao, YB Zhao, Z Pan, C Li, ... Advanced Materials 32 (19), 1908496, 2020 | 246 | 2020 |
| Ultrafine cellulose nanofiber‐assisted physical and chemical cross‐linking of MXene sheets for electromagnetic interference shielding N Wu, Z Zeng, N Kummer, D Han, R Zenobi, G Nyström Small Methods 5 (12), 2100889, 2021 | 88 | 2021 |
| Nanocellulose assisted preparation of ambient dried, large-scale and mechanically robust carbon nanotube foams for electromagnetic interference shielding Z Zeng, C Wang, T Wu, D Han, M Luković, F Pan, G Siqueira, G Nyström Journal of Materials Chemistry A 8 (35), 17969-17979, 2020 | 73 | 2020 |
| InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Saranovac, D Han, ... IEEE Transactions on Electron Devices 69 (4), 2122-2129, 2022 | 28 | 2022 |
| InAs channel inset effects on the DC, RF, and noise properties of InP pHEMTs DC Ruiz, T Saranovac, D Han, A Hambitzer, AM Arabhavi, O Ostinelli, ... IEEE Transactions on Electron Devices 66 (11), 4685-4691, 2019 | 12 | 2019 |
| Impact ionization control in 50 nm low-noise high-speed InP HEMTs with InAs channel insets DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi 2019 IEEE International Electron Devices Meeting (IEDM), 9.3. 1-9.3. 4, 2019 | 9 | 2019 |
| A physical route to porous ethyl cellulose microspheres loaded with TiO2 nanoparticles W Cai, H Yang, D Han, X Guo Journal of Applied Polymer Science 131 (19), 2014 | 8 | 2014 |
| Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs D Han, DC Ruiz, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi IEEE electron device letters, 2020 | 7 | 2020 |
| Effects of electrochemical etching on InP HEMT fabrication T Saranovac, DC Ruiz, D Han, AM Arabhavi, O Ostinelli, CR Bolognesi IEEE Transactions on Semiconductor Manufacturing 32 (4), 496-501, 2019 | 7 | 2019 |
| A facile route to synthesize porous ethyl cellulose spheres loaded with superparamagnetic iron oxide nanoparticles H Yang, Y Xie, D Han, W Mao, W Cai, X Guo Colloid and Polymer Science 293, 1915-1922, 2015 | 5 | 2015 |
| Synthesis of “brain-like” hierarchical porous microspheres by emulsion-solvent evaporation W Zhu, J Ren, Z Wang, D Han, H Yang, X Guo Materials Letters 155, 130-133, 2015 | 4 | 2015 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3549-3556, 2022 | 3 | 2022 |
| InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with fMAX = 1.2 THz AM Arabhavi, F Ciabattini, S Hamzeloui, R Flückiger, T Popovic, D Han, ... 2021 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2021 | 3 | 2021 |
| High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS= 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi IEEE Transactions on Electron Devices 69 (7), 3542-3548, 2022 | 2 | 2022 |
| New GaInAs/InAs/InP composite channels for mm-wave low-noise InP HEMTs DC Ruiz, T Saranovac, D Han, O Ostinelli, CR Bolognesi 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 2 | 2019 |
| Steep-Slope, Fast Switching and High frequency InAs Impact Ionization MOSFETs Operating at Low VDS D Han, G Bonomo, DC Ruiz, AM Arabhavi, OJS Ostinelli, CR Bolognesi 45th Workshop on Compound Semiconductor Devices and Integrated Circuits …, 2022 | | 2022 |
| Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance D Calvo Ruiz, D Han, G Bonomo, T Saranovac, O Ostinelli, CR Bolognesi physica status solidi (a) 218 (3), 2000191, 2021 | | 2021 |
| Gate Recess Etch Sensitivity of Thick and Highly-Doped GaInAs Cap Layer in InP HEMT Fabrication D Han, DC Ruiz, T Saranovac, O Ostinelli, CR Bolognesi CS MANTECH 2020 Digest of Papers, 145-147, 2020 | | 2020 |
Prof. Dr. Colombo BolognesiETH Zurich, Chair, Millimeter-Wave ElectronicsE-mail confirmado em mwe.ee.ethz.ch
