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Kurt P. Pernstich
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Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
KP Pernstich, S Haas, D Oberhoff, C Goldmann, DJ Gundlach, B Batlogg, ...
Journal of Applied Physics 96 (11), 6431-6438, 2004
6382004
Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals
J Takeya, C Goldmann, S Haas, KP Pernstich, B Ketterer, B Batlogg
Journal of Applied Physics 94 (9), 5800-5804, 2003
3132003
Hole mobility in organic single crystals measured by a “flip-crystal” field-effect technique
C Goldmann, S Haas, C Krellner, KP Pernstich, DJ Gundlach, B Batlogg
Journal of Applied Physics 96 (4), 2080-2086, 2004
3032004
Field-effect-modulated Seebeck coefficient in organic semiconductors
KP Pernstich, B Rössner, B Batlogg
Nature materials 7 (4), 321-325, 2008
2452008
Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ...
Applied Physics Letters 102 (18), 2013
1712013
Density of bulk trap states in organic semiconductor crystals: Discrete levels induced by oxygen in rubrene
C Krellner, S Haas, C Goldmann, KP Pernstich, DJ Gundlach, B Batlogg
Physical Review B 75 (24), 245115, 2007
1602007
Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density
C Goldmann, C Krellner, KP Pernstich, S Haas, DJ Gundlach, B Batlogg
Journal of applied physics 99 (3), 2006
1602006
High mobility n-channel organic thin-film transistors and complementary inverters
DJ Gundlach, KP Pernstich, G Wilckens, M Grüter, S Haas, B Batlogg
Journal of Applied Physics 98 (6), 2005
1482005
Modeling the water related trap state created in pentacene transistors
KP Pernstich, D Oberhoff, C Goldmann, B Batlogg
Applied Physics Letters 89 (21), 2006
842006
New dithieno [3, 2-b: 2′, 3′-d] thiophene oligomers as promising materials for organic field-effect transistor applications
MD Iosip, S Destri, M Pasini, W Porzio, KP Pernstich, B Batlogg
Synthetic Metals 146 (3), 251-257, 2004
802004
Arbitrary density of states in an organic thin-film field-effect transistor model and application to pentacene devices
D Oberhoff, KP Pernstich, DJ Gundlach, B Batlogg
IEEE transactions on electron devices 54 (1), 17-25, 2006
782006
High charge-carrier mobility and low trap density in a rubrene derivative
S Haas, AF Stassen, G Schuck, KP Pernstich, DJ Gundlach, B Batlogg, ...
Physical Review B 76 (11), 115203, 2007
762007
Determination of trap distributions from current characteristics of pentacene field-effect transistors with surface modified gate oxide
S Scheinert, KP Pernstich, B Batlogg, G Paasch
Journal of Applied Physics 102 (10), 2007
682007
Shifted transfer characteristics of organic thin film and single crystal FETs
KP Pernstich, C Goldmann, C Krellner, D Oberhoff, DJ Gundlach, ...
Synthetic metals 146 (3), 325-328, 2004
482004
Probing Charge Recombination Dynamics in Organic Photovoltaic Devices under Open‐Circuit Conditions
LCC Elliott, JI Basham, KP Pernstich, PR Shrestha, LJ Richter, ...
Advanced Energy Materials 4 (15), 1400356, 2014
352014
Electroless plating of ultrathin films and mirrors of platinum nanoparticles onto polymers, metals, and ceramics
KP Pernstich, M Schenker, F Weibel, A Rossi, WR Caseri
ACS Applied Materials & Interfaces 2 (3), 639-643, 2010
352010
Influence of the bias-dependent emission zone on exciton quenching and OLED efficiency
M Regnat, KP Pernstich, B Ruhstaller
Organic Electronics 70, 219-226, 2019
272019
Routes for efficiency enhancement in fluorescent TADF exciplex host OLEDs gained from an electro‐optical device model
M Regnat, KP Pernstich, KH Kim, JJ Kim, F Nüesch, B Ruhstaller
Advanced Electronic Materials 6 (2), 1900804, 2020
262020
Observation of spin-polarized electron transport in Alq3 by using a low work function metal
HJ Jang, KP Pernstich, DJ Gundlach, OD Jurchescu, C Richter
Applied Physics Letters 101 (10), 2012
222012
Analysis of the bias-dependent split emission zone in phosphorescent OLEDs
M Regnat, KP Pernstich, S Züfle, B Ruhstaller
ACS applied materials & interfaces 10 (37), 31552-31559, 2018
212018
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