Electrical Switching of Tristate Antiferromagnetic Néel Order in Epitaxial Films Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 124 (2), 027202, 2020
136 2020 Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (3), 2020
116 2020 Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2 IH Kao, R Muzzio, H Zhang, M Zhu, J Gobbo, S Yuan, D Weber, R Rao, ...
Nature Materials 21 (9), 1029-1034, 2022
86 2022 Anisotropic magnetoresistance and nontrivial spin Hall magnetoresistance in bilayers Y Cheng, S Yu, AS Ahmed, M Zhu, Y Rao, M Ghazisaeidi, J Hwang, ...
Physical Review B 100 (22), 220408, 2019
50 2019 Synthesis, Magnetic Properties, and Electronic Structure of Magnetic Topological Insulator MnBi2 Se4 T Zhu, AJ Bishop, T Zhou, M Zhu, DJ O’Hara, AA Baker, S Cheng, ...
Nano Letters 21 (12), 5083-5090, 2021
46 2021 Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction H Kim, S Lee, J Shin, M Zhu, M Akl, K Lu, NM Han, Y Baek, CS Chang, ...
Nature Nanotechnology 17 (10), 1054-1059, 2022
38 2022 Evidence of the topological Hall effect in Pt/antiferromagnetic insulator bilayers Y Cheng, S Yu, M Zhu, J Hwang, F Yang
Physical Review Letters 123 (23), 237206, 2019
38 2019 Interfacial Rashba-effect-induced anisotropy in nonmagnetic-material–ferrimagnetic-insulator bilayers AJ Lee, AS Ahmed, BA McCullian, S Guo, M Zhu, S Yu, PM Woodward, ...
Physical Review Letters 124 (25), 257202, 2020
32 2020 Deep level defects and cation sublattice disorder in ZnGeN2 MS Haseman, MR Karim, D Ramdin, BA Noesges, E Feinberg, ...
Journal of Applied Physics 127 (13), 2020
31 2020 Corrosion inhibition of AZ31 Mg alloy by aqueous selenite (SeO32−) Z Feng, B Hurley, M Zhu, Z Yang, J Hwang, R Buchheit
Journal of The Electrochemical Society 166 (14), C520, 2019
31 2019 Medium-range ordering, structural heterogeneity, and their influence on properties of Zr-Cu-Co-Al metallic glasses S Im, Y Wang, P Zhao, GH Yoo, Z Chen, G Calderon, MA Gharacheh, ...
Physical Review Materials 5 (11), 115604, 2021
26 2021 APL Mater. 8, 031104 (2020) A Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, MR Karim, ...
26 High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process H Kim, Y Liu, K Lu, CS Chang, D Sung, M Akl, K Qiao, KS Kim, BI Park, ...
Nature nanotechnology 18 (5), 464-470, 2023
18 2023 Atomic scale investigation of chemical heterogeneity in β-(AlxGa1− x) 2O3 films using atom probe tomography B Mazumder, J Sarker, Y Zhang, JM Johnson, M Zhu, S Rajan, J Hwang
Applied Physics Letters 115 (13), 2019
18 2019 Tunable topological Hall effects in noncollinear antiferromagnet Mn3Sn/Pt bilayers Y Cheng, S Yu, M Zhu, J Hwang, F Yang
APL Materials 9 (5), 2021
15 2021 Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition MR Karim, BHD Jayatunga, M Zhu, RA Lalk, O Licata, B Mazumder, ...
AIP Advances 10 (6), 2020
15 2020 Low-Pressure Chemical Vapor Deposition of In2 O3 Films on Off-Axis c-Sapphire Substrates MR Karim, Z Feng, JM Johnson, M Zhu, J Hwang, H Zhao
Crystal Growth & Design 19 (3), 1965-1972, 2019
14 2019 Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films’”[APL Mater. 8, 089101 (2020)] AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ...
APL Materials 8 (8), 2020
13 2020 Nanometer-Thick Sr2 IrO4 Freestanding Films for Flexible Electronics S Shrestha, M Coile, M Zhu, M Souri, J Kim, R Pandey, JW Brill, J Hwang, ...
ACS Applied Nano Materials 3 (7), 6310-6315, 2020
12 2020 Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe) 0.94 Ga0. 12N2 with GaN MR Karim, BA Noesges, BHD Jayatunga, M Zhu, J Hwang, ...
Journal of Physics D: Applied Physics 54 (24), 245102, 2021
10 2021