Seguir
Hyo Won Kim
Hyo Won Kim
Outros nomesHyowon Kim
Samsung Advanced Institute of Technology
E-mail confirmado em samsung.com
Título
Citado por
Citado por
Ano
Conformational molecular switch of the azobenzene molecule: a scanning tunneling microscopy study
BY Choi, SJ Kahng, S Kim, H Kim, HW Kim, YJ Song, J Ihm, Y Kuk
Physical review letters 96 (15), 156106, 2006
4692006
Active hydrogen evolution through lattice distortion in metallic MoTe2
J Seok, JH Lee, S Cho, B Ji, HW Kim, M Kwon, D Kim, YM Kim, SH Oh, ...
2D Materials 4 (2), 025061, 2017
1122017
Nanoscale control of phonon excitations in graphene
HW Kim, W Ko, JY Ku, I Jeon, D Kim, H Kwon, Y Oh, S Ryu, Y Kuk, ...
Nature communications 6 (1), 7528, 2015
562015
Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3
W Ko, I Jeon, HW Kim, H Kwon, SJ Kahng, J Park, JS Kim, SW Hwang, ...
Scientific reports 3 (1), 2656, 2013
552013
Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride
S Cho, SH Kang, HS Yu, HW Kim, W Ko, SW Hwang, WH Han, DH Choe, ...
2D Materials 4 (2), 021030, 2017
462017
Control of molecular rotors by selection of anchoring sites
HW Kim, M Han, HJ Shin, S Lim, Y Oh, K Tamada, M Hara, Y Kim, ...
Physical review letters 106 (14), 146101, 2011
352011
One-dimensional molecular zippers
HW Kim, J Jung, M Han, S Lim, K Tamada, M Hara, M Kawai, Y Kim, ...
Journal of the American Chemical Society 133 (24), 9236-9238, 2011
222011
Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2
H Kwon, K Lee, J Heo, Y Oh, H Lee, S Appalakondaiah, W Ko, HW Kim, ...
Advanced Materials 29 (41), 1702931, 2017
212017
Symmetry dictated grain boundary state in a two-dimensional topological insulator
HW Kim, SH Kang, HJ Kim, K Chae, S Cho, W Ko, S Jeon, SH Kang, ...
Nano Letters 20 (8), 5837-5843, 2020
202020
Unraveling the structural and electronic properties of graphene/Ge (110)
HW Kim, W Ko, WJ Joo, Y Cho, Y Oh, JY Ku, I Jeon, S Park, SW Hwang
The Journal of Physical Chemistry Letters 9 (24), 7059-7063, 2018
182018
Strong interaction between graphene edge and metal revealed by scanning tunneling microscopy
HW Kim, JY Ku, W Ko, I Jeon, H Kwon, S Ryu, SJ Kahng, SH Lee, ...
Carbon 78, 190-195, 2014
182014
Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics
SJ Jeong, HW Kim, J Heo, MH Lee, HJ Song, JY Ku, Y Lee, Y Cho, ...
2D Materials 3 (3), 035027, 2016
172016
Wafer-scale integration of transition metal dichalcogenide field-effect transistors using adhesion lithography
VL Nguyen, M Seol, J Kwon, EK Lee, WJ Jang, HW Kim, C Liang, ...
Nature Electronics 6 (2), 146-153, 2023
152023
Breakdown of chiral recognition of amino acids in reduced dimensions
Y Jeong, HW Kim, JY Ku, J Seo
Scientific Reports 10 (1), 16166, 2020
142020
Electronic structure and switching behavior of the metastable silicene domain boundary
Y Oh, Y Cho, H Kwon, J Lee, I Jeon, W Ko, HW Kim, JY Ku, G Kim, H Suh, ...
Applied Physics Letters 110 (26), 2017
142017
Local potential fluctuation of topological surface states in Bi1. 5Sb0. 5Te1. 7Se1. 3 observed by Landau level spectroscopy
W Ko, J Park, I Jeon, HW Kim, H Kwon, Y Oh, JS Kim, H Suh, SW Hwang, ...
Applied Physics Letters 108 (8), 2016
132016
Confinement of the Pt (111) surface state in graphene nanoislands
HW Kim, S Takemoto, E Minamitani, T Okada, T Takami, K Motobayashi, ...
The Journal of Physical Chemistry C 120 (1), 345-349, 2016
112016
Evolution of graphene growth on Pt (111): From carbon clusters to nanoislands
HW Kim, W Ko, JY Ku, Y Kim, S Park, S Hwang
The Journal of Physical Chemistry C 121 (45), 25074-25078, 2017
92017
Reshaped Weyl fermionic dispersions driven by Coulomb interactions in
SH Kang, S Jeon, HJ Kim, W Ko, S Cho, SH Kang, SW Kim, H Yang, ...
Physical Review B 105 (4), 045143, 2022
62022
Molecular oxygen network as a template for adsorption of ammonia on Pt (111)
Z Liang, H Kim, Y Kim, M Trenary
The Journal of Physical Chemistry Letters 4 (17), 2900-2905, 2013
62013
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20