Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
1199 2016 Internal electric field in wurtzite quantum wells C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B 72 (24), 241305, 2005
239 2005 Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
229 2019 Radiative lifetime of a single electron-hole pair in quantum dots T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B 73 (11), 113304, 2006
147 2006 Giant Rabi splitting between localized mixed plasmon-exciton states in a two-dimensional array of nanosize metallic disks in an organic semiconductor J Bellessa, C Symonds, K Vynck, A Lemaitre, A Brioude, L Beaur, ...
Physical Review B 80 (3), 033303, 2009
136 2009 Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ...
2D Materials 4 (2), 021023, 2017
117 2017 Isotope engineering of van der Waals interactions in hexagonal boron nitride TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ...
Nature materials 17 (2), 152-158, 2018
114 2018 Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ...
Physical review letters 117 (9), 097402, 2016
104 2016 Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ...
MRS Internet Journal of Nitride Semiconductor Research 7, 1-7, 2002
103 2002 Intervalley scattering in hexagonal boron nitride G Cassabois, P Valvin, B Gil
Physical review B 93 (3), 035207, 2016
81 2016 Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ...
Journal of Applied Physics 105 (1), 2009
81 2009 Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite quantum well after high photoexcitation P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ...
Physical Review B 69 (3), 035307, 2004
75 2004 Deep-UV nitride-on-silicon microdisk lasers J Selles, C Brimont, G Cassabois, P Valvin, T Guillet, I Roland, Y Zeng, ...
Scientific Reports 6 (1), 21650, 2016
70 2016 Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation T Bretagnon, S Kalliakos, P Lefebvre, P Valvin, B Gil, N Grandjean, ...
Physical Review B 68 (20), 205301, 2003
54 2003 Shallow and deep levels in carbon-doped hexagonal boron nitride crystals T Pelini, C Elias, R Page, L Xue, S Liu, J Li, JH Edgar, A Dréau, ...
Physical Review Materials 3 (9), 094001, 2019
50 2019 Laser emission with excitonic gain in a ZnO planar microcavity T Guillet, C Brimont, P Valvin, B Gil, T Bretagnon, F Médard, M Mihailovic, ...
Applied Physics Letters 98 (21), 2011
46 2011 Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures TH Ngo, B Gil, P Valvin, B Damilano, K Lekhal, P De Mierry
Applied Physics Letters 107 (12), 2015
43 2015 Band gap measurements of monolayer h-BN and insights into carbon-related point defects RJP Román, FJRC Costa, A Zobelli, C Elias, P Valvin, G Cassabois, B Gil, ...
2D Materials 8 (4), 044001, 2021
41 2021 Overtones of interlayer shear modes in the phonon-assisted emission spectrum of hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, V Jacques, R Cuscó, L Artús, B Gil
Physical review B 95 (4), 045207, 2017
40 2017 Phonon symmetries in hexagonal boron nitride probed by incoherent light emission TQP Vuong, G Cassabois, P Valvin, V Jacques, A van Der Lee, A Zobelli, ...
2D Materials 4 (1), 011004, 2016
39 2016