A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ...
IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007
175 2007 Analysis of threshold voltage distribution due to random dopants: A 100 000-sample 3-D simulation study D Reid, C Millar, G Roy, S Roy, A Asenov
IEEE Transactions on Electron Devices 56 (10), 2255-2263, 2009
89 2009 Accurate statistical description of random dopant-induced threshold voltage variability C Millar, D Reid, G Roy, S Roy, A Asenov
IEEE Electron Device Letters 29 (8), 946-948, 2008
87 2008 Variability aware simulation based design-technology cooptimization (DTCO) flow in 14 nm FinFET/SRAM cooptimization A Asenov, B Cheng, X Wang, AR Brown, C Millar, C Alexander, ...
IEEE Transactions on Electron Devices 62 (6), 1682-1690, 2014
72 2014 Statistical-variability compact-modeling strategies for BSIM4 and PSP B Cheng, D Dideban, N Moezi, C Millar, G Roy, X Wang, S Roy, A Asenov
IEEE Design & Test of Computers 27 (2), 26-35, 2010
71 2010 Interplay between process-induced and statistical variability in 14-nm CMOS technology double-gate SOI FinFETs X Wang, B Cheng, AR Brown, C Millar, JB Kuang, S Nassif, A Asenov
IEEE Transactions on Electron Devices 60 (8), 2485-2492, 2013
62 2013 Understanding LER-Induced MOSFET D Reid, C Millar, S Roy, A Asenov
IEEE Transactions on Electron Devices 57 (11), 2801-2807, 2010
59 2010 Advanced simulation of statistical variability and reliability in nano CMOS transistors A Asenov, S Roy, RA Brown, G Roy, C Alexander, C Riddet, C Millar, ...
2008 IEEE International Electron Devices Meeting, 1-1, 2008
50 2008 Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review L Gerrer, J Ding, SM Amoroso, F Adamu-Lema, R Hussin, D Reid, C Millar, ...
Microelectronics Reliability 54 (4), 682-697, 2014
49 2014 Extended Analysis of the C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
45 2017 Evaluation of statistical variability in 32 and 22 nm technology generation LSTP MOSFETs B Cheng, S Roy, AR Brown, C Millar, A Asenov
Solid-State Electronics 53 (7), 767-772, 2009
39 2009 A survey of carbon nanotube interconnects for energy efficient integrated circuits A Todri-Sanial, R Ramos, H Okuno, J Dijon, A Dhavamani, M Widlicenus, ...
IEEE Circuits and Systems Magazine 17 (2), 47-62, 2017
37 2017 Impact of self-heating on the statistical variability in bulk and SOI FinFETs L Wang, AR Brown, M Nedjalkov, C Alexander, B Cheng, C Millar, ...
IEEE Transactions on Electron Devices 62 (7), 2106-2112, 2015
37 2015 C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
35 2017 FinFET centric variability-aware compact model extraction and generation technology supporting DTCO X Wang, B Cheng, D Reid, A Pender, P Asenov, C Millar, A Asenov
IEEE Transactions on Electron Devices 62 (10), 3139-3146, 2015
34 2015 Predictive simulation and benchmarking of Si and Ge pMOS FinFETs for future CMOS technology L Shifren, R Aitken, AR Brown, V Chandra, B Cheng, C Riddet, ...
IEEE Transactions on Electron Devices 61 (7), 2271-2277, 2014
32 2014 3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity L Wang, AR Brown, M Nedjalkov, C Alexander, B Cheng, C Millar, ...
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
28 2014 Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization L Gerrer, AR Brown, C Millar, R Hussin, SM Amoroso, B Cheng, D Reid, ...
IEEE Transactions on Electron Devices 62 (6), 1739-1745, 2015
26 2015 Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability A Asenov, B Cheng, X Wang, AR Brown, D Reid, C Millar, C Alexander
2013 IEEE International Electron Devices Meeting, 33.1. 1-33.1. 4, 2013
25 2013 Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology L Gerrer, SM Amoroso, P Asenov, J Ding, B Cheng, F Adamu-Lema, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 2.1-3A. 2.5, 2013
22 2013 
a asenovThe University of GlasgowE-mail confirmado em glasgow.ac.uk
