| Qubits made by advanced semiconductor manufacturing AMJ Zwerver, T Krähenmann, TF Watson, L Lampert, HC George, ... Nature Electronics 5 (3), 184-190, 2022 | 219 | 2022 |
| Quantum dot arrays in silicon and germanium WIL Lawrie, HGJ Eenink, NW Hendrickx, JM Boter, L Petit, SV Amitonov, ... Applied Physics Letters 116 (8), 2020 | 128 | 2020 |
| Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ... Advanced Functional Materials 29 (14), 1807613, 2019 | 113 | 2019 |
| Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitectures M Naffouti, R Backofen, M Salvalaglio, T Bottein, M Lodari, A Voigt, ... Science advances 3 (11), eaao1472, 2017 | 103 | 2017 |
| Light effective hole mass in undoped Ge/SiGe quantum wells M Lodari, A Tosato, D Sabbagh, MA Schubert, G Capellini, A Sammak, ... Physical Review B 100 (4), 041304, 2019 | 64 | 2019 |
| Ballistic superconductivity and tunable π–junctions in InSb quantum wells CT Ke, CM Moehle, FK de Vries, C Thomas, S Metti, CR Guinn, ... Nature communications 10 (1), 3764, 2019 | 62 | 2019 |
| Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots B Paquelet Wuetz, MP Losert, S Koelling, LEA Stehouwer, AMJ Zwerver, ... Nature Communications 13 (1), 7730, 2022 | 45 | 2022 |
| Low percolation density and charge noise with holes in germanium M Lodari, NW Hendrickx, WIL Lawrie, TK Hsiao, LMK Vandersypen, ... Materials for Quantum Technology 1 (1), 011002, 2021 | 44 | 2021 |
| InSbAs two-dimensional electron gases as a platform for topological superconductivity CM Moehle, CT Ke, Q Wang, C Thomas, D Xiao, S Karwal, M Lodari, ... Nano Letters 21 (23), 9990-9996, 2021 | 37 | 2021 |
| Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits M Bollani, M Salvalaglio, A Benali, M Bouabdellaoui, M Naffouti, M Lodari, ... Nature communications 10 (1), 5632, 2019 | 36 | 2019 |
| Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures M Bollani, D Chrastina, L Gagliano, L Rossetto, D Scopece, M Barget, ... Applied Physics Letters 107 (8), 2015 | 28 | 2015 |
| Lightly strained germanium quantum wells with hole mobility exceeding one million M Lodari, O Kong, M Rendell, A Tosato, A Sammak, M Veldhorst, ... Applied Physics Letters 120 (12), 2022 | 27 | 2022 |
| Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths M Lodari, P Biagioni, M Ortolani, L Baldassarre, G Isella, M Bollani Optics Express 27 (15), 20516-20524, 2019 | 20 | 2019 |
| Wafer-scale low-disorder 2DEG in 28Si/SiGe without an epitaxial Si cap D Degli Esposti, B Paquelet Wuetz, V Fezzi, M Lodari, A Sammak, ... Applied physics letters 120 (18), 2022 | 15 | 2022 |
| Effect of quantum hall edge strips on valley splitting in silicon quantum wells BP Wuetz, MP Losert, A Tosato, M Lodari, PL Bavdaz, L Stehouwer, ... Physical review letters 125 (18), 186801, 2020 | 15 | 2020 |
| Solid-state dewetting of single-crystal silicon on insulator: effect of annealing temperature and patch size M Abbarchi, M Naffouti, M Lodari, M Salvalaglio, R Backofen, T Bottein, ... Microelectronic Engineering 190, 1-6, 2018 | 14 | 2018 |
| Top–down SiGe nanostructures on Ge membranes realized by e-beam lithography and wet etching V Mondiali, M Lodari, M Borriello, D Chrastina, M Bollani Microelectronic Engineering 153, 88-91, 2016 | 13 | 2016 |
| Metastability and relaxation in tensile SiGe on Ge (001) virtual substrates J Frigerio, M Lodari, D Chrastina, V Mondiali, G Isella, M Bollani Journal of Applied Physics 116 (11), 2014 | 13 | 2014 |
| Engineering of the spin on dopant process on silicon on insulator substrate C Barri, E Mafakheri, L Fagiani, G Tavani, A Barzaghi, D Chrastina, ... Nanotechnology 32 (2), 025303, 2020 | 11 | 2020 |
| Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching V Mondiali, M Lodari, D Chrastina, M Barget, E Bonera, M Bollani Microelectronic Engineering 141, 256-260, 2015 | 11 | 2015 |
Giordano ScappucciQuTech, TU DelftE-mail confirmado em tudelft.nl
