Red light emission by photoluminescence and electroluminescence from Eu-doped GaN J Heikenfeld, M Garter, DS Lee, R Birkhahn, AJ Steckl
Applied Physics Letters 75 (9), 1189-1191, 1999
351 1999 Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices AJ Steckl, JC Heikenfeld, DS Lee, MJ Garter, CC Baker, Y Wang, R Jones
IEEE Journal of Selected Topics in Quantum Electronics 8 (4), 749-766, 2002
340 2002 Method for improved growth of semipolar (Al, In, Ga, B) N JF Kaeding, DS Lee, M Iza, TJ Baker, H Sato, BA Haskell, JS Speck, ...
US Patent 7,691,658, 2010
315 2010 Blue emission from Tm-doped GaN electroluminescent devices AJ Steckl, M Garter, DS Lee, J Heikenfeld, R Birkhahn
Applied physics letters 75 (15), 2184-2186, 1999
184 1999 Spectral and time-resolved photoluminescence studies of Eu-doped GaN EE Nyein, U Hömmerich, J Heikenfeld, DS Lee, AJ Steckl, JM Zavada
Applied physics letters 82 (11), 1655-1657, 2003
171 2003 Multiple color capability from rare earth-doped gallium nitride AJ Steckl, J Heikenfeld, DS Lee, M Garter
Materials Science and Engineering: B 81 (1-3), 97-101, 2001
130 2001 Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN U Hömmerich, EE Nyein, DS Lee, J Heikenfeld, AJ Steckl, JM Zavada
Materials Science and Engineering: B 105 (1-3), 91-96, 2003
116 2003 Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano
CrystEngComm 16 (11), 2273-2282, 2014
99 2014 Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu DS Lee, J Heikenfeld, R Birkhahn, M Garter, BK Lee, AJ Steckl
Applied Physics Letters 76 (12), 1525-1527, 2000
99 2000 Comparison study of ZnO-based quaternary TCO materials for photovoltaic application JS Jang, J Kim, U Ghorpade, HH Shin, MG Gang, SD Park, HJ Kim, ...
Journal of Alloys and Compounds 793, 499-504, 2019
88 2019 Temperature dependence of energy transfer mechanisms in Eu-doped GaN CW Lee, HO Everitt, DS Lee, AJ Steckl, JM Zavada
Journal of applied physics 95 (12), 7717-7724, 2004
76 2004 Photoluminescence properties of in situ Tm-doped U Hömmerich, EE Nyein, DS Lee, AJ Steckl, JM Zavada
Applied physics letters 83 (22), 4556-4558, 2003
75 2003 Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ...
Optics Express 25 (3), 2489-2495, 2017
74 2017 Enhanced blue emission from Tm-doped electroluminescent thin films DS Lee, AJ Steckl
Applied physics letters 83 (11), 2094-2096, 2003
74 2003 Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ...
ACS photonics 5 (11), 4413-4422, 2018
67 2018 Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays H Jeong, DJ Park, HS Lee, YH Ko, JS Yu, SB Choi, DS Lee, EK Suh, ...
Nanoscale 6 (8), 4371-4378, 2014
67 2014 Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction BO Jung, YH Kwon, DJ Seo, DS Lee, HK Cho
Journal of crystal growth 370, 314-318, 2013
67 2013 Spectroscopic and energy transfer studies of Eu3+ centers in GaN H Peng, CW Lee, HO Everitt, C Munasinghe, DS Lee, AJ Steckl
Journal of Applied Physics 102 (7), 2007
64 2007 Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ...
Nano Energy 11, 294-303, 2015
58 2015 Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices M Choe, CY Cho, JP Shim, W Park, SK Lim, WK Hong, B Hun Lee, ...
Applied Physics Letters 101 (3), 2012
57 2012