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David Lehninger
David Lehninger
Fraunhofer IPMS CNT
E-mail confirmado em ipms.fraunhofer.de
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A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage
T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ...
2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019
1002019
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD
M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ...
Applied Physics Letters 115 (22), 2019
992019
Back‐end‐of‐line compatible low‐temperature furnace anneal for ferroelectric hafnium zirconium oxide formation
D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ...
physica status solidi (a) 217 (8), 1900840, 2020
942020
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100086, 2021
682021
A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics
D Lehninger, J Beyer, J Heitmann
physica status solidi (a) 215 (7), 1701028, 2018
582018
Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury
A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ...
Journal of Nuclear Medicine 60 (11), 1629-1634, 2019
55*2019
A fully integrated ferroelectric thin‐film‐transistor–influence of device scaling on threshold voltage compensation in displays
D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ...
Advanced Electronic Materials 7 (6), 2100082, 2021
342021
A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability
T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ...
IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020
33*2020
Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide
M Lederer, P Bagul, D Lehninger, K Mertens, A Reck, R Olivo, T Kampfe, ...
ACS Applied Electronic Materials 3 (9), 4115-4120, 2021
302021
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ...
Advanced Functional Materials 32 (27), 2201737, 2022
282022
Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
M Lederer, S Abdulazhanov, R Olivo, D Lehninger, T Kämpfe, K Seidel, ...
Scientific reports 11 (1), 22266, 2021
272021
Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films
D Lehninger, P Seidel, M Geyer, F Schneider, V Klemm, D Rafaja, ...
Applied Physics Letters 106 (2), 2015
262015
Ge nanostructures embedded in ZrO2 dielectric films for nonvolatile memory applications
D Lehninger, L Khomenkova, C Röder, G Gärtner, B Abendroth, J Beyer, ...
ECS Transactions 66 (4), 203, 2015
242015
Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications
A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ...
IEEE Transactions on Electron Devices 69 (2), 808-815, 2021
222021
Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide
M Lederer, K Mertens, R Olivo, K Kühnel, D Lehninger, T Ali, T Kämpfe, ...
Journal of Materials Research 36, 4370-4378, 2021
182021
A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
T Ali, K Mertens, K Kühnel, M Rudolph, S Oehler, D Lehninger, F Müller, ...
Nanotechnology 32 (42), 425201, 2021
182021
Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures
L Khomenkova, D Lehninger, O Kondratenko, S Ponomaryov, ...
Nanoscale research letters 12, 1-12, 2017
172017
Review on the microstructure of ferroelectric hafnium oxides
M Lederer, D Lehninger, T Ali, T Kämpfe
physica status solidi (RRL)–Rapid Research Letters 16 (10), 2200168, 2022
152022
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer
K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
152022
Study of nanosecond laser annealing on silicon doped hafnium oxide film crystallization and capacitor reliability
T Ali, R Olivo, S Kerdiles, D Lehninger, M Lederer, D Sourav, AS Royet, ...
2022 IEEE International Memory Workshop (IMW), 1-4, 2022
152022
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