PIL SUNG PARK

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Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityE-mail confirmado em ece.osu.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceE-mail confirmado em iisc.ac.in
Sriram KrishnamoorthyUniversity of California, Santa BarbaraE-mail confirmado em ucsb.edu
Fatih AkyolYıldız Teknik ÜniversitesiE-mail confirmado em yildiz.edu.tr
Sanyam BajajIntel CorporationE-mail confirmado em intel.com
Zhichao YangDepartment of Electrical and Computer Engineering, The Ohio State UniversityE-mail confirmado em ece.osu.edu
Wu Lu, ProfessorThe Ohio State UniversityE-mail confirmado em osu.edu
Masihhur LaskarUniversity of Wisconsin-MadisonE-mail confirmado em wisc.edu
Emre GÜRProf., Department of Physics, Faculty of Science, Eskişehir Osmangazi University, 26480, MeşelikE-mail confirmado em ogu.edu.tr
Roberto C. MyersProfessor of Materials Science, Electrical Engineering, and Physics, The Ohio State UniversityE-mail confirmado em osu.edu
Jacob B KhurginJohns Hopkins UniversityE-mail confirmado em jhu.edu
Omor ShoronSoftware Reaserch Engineer (Compact Device Modeling), Intel CorporationE-mail confirmado em intel.com
Nitin P. PadtureOtis E. Randall University Professor, Brown UniversityE-mail confirmado em brown.edu
Yuh-Renn WuProfessor of Electrical Engineering, National Taiwan UniversityE-mail confirmado em ntu.edu.tw
Stacia KellerUniversity of California Santa BarbaraE-mail confirmado em ece.ucsb.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityE-mail confirmado em osu.edu

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PIL SUNG PARK

Technology Development Center, Samsung Electronics

E-mail confirmado em osu.edu

Si(Ge)-based & group III-Nitride Semiconductor devices including transistors and diodes and 2-D material-based transistor devic


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013	266	2013
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010	192	2010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012	177	2012
Low resistance GaN/InGaN/GaN tunnel junctions S Krishnamoorthy, F Akyol, PS Park, S Rajan Applied Physics Letters 102 (11), 2013	154	2013
N-polar III–nitride green (540 nm) light emitting diode F Akyol, DN Nath, E Gür, PS Park, S Rajan Japanese Journal of Applied Physics 50 (5R), 052101, 2011	104	2011
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces TH Hung, S Krishnamoorthy, M Esposto, D Neelim Nath, P Sung Park, ... Applied Physics Letters 102 (7), 2013	101	2013
Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs PS Park, S Rajan IEEE Transactions on Electron Devices 58 (3), 704-708, 2011	101	2011
Interface charge engineering for enhancement-mode GaN MISHEMTs TH Hung, PS Park, S Krishnamoorthy, DN Nath, S Rajan IEEE Electron Device Letters 35 (3), 312-314, 2014	99	2014
GdN nanoisland-based GaN tunnel junctions S Krishnamoorthy, TF Kent, J Yang, PS Park, RC Myers, S Rajan Nano letters 13 (6), 2570-2575, 2013	85	2013
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ... Applied Physics Letters 107 (15), 2015	84	2015
Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017	80	2017
Demonstration of forward inter-band tunneling in GaN by polarization engineering S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 99 (23), 2011	79	2011
Unipolar vertical transport in GaN/AlGaN/GaN heterostructures DN Nath, ZC Yang, CY Lee, PS Park, YR Wu, S Rajan Applied Physics Letters 103 (2), 2013	66	2013
Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization P Sung Park, DN Nath, S Krishnamoorthy, S Rajan Applied Physics Letters 100 (6), 2012	60	2012
Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3 TH Hung, K Sasaki, A Kuramata, DN Nath, P Sung Park, C Polchinski, ... Applied Physics Letters 104 (16), 2014	55	2014
Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion P Sung Park, KM Reddy, DN Nath, Z Yang, NP Padture, S Rajan Applied Physics Letters 102 (15), 2013	36	2013
Recess-free nonalloyed ohmic contacts on graded AlGaN heterojunction FETs PS Park, S Krishnamoorthy, S Bajaj, DN Nath, S Rajan IEEE Electron Device Letters 36 (3), 226-228, 2015	27	2015
Quantum capacitance in N-polar GaN/AlGaN/GaN heterostructures PS Park, DN Nath, S Rajan IEEE Electron Device Letters 33 (7), 991-993, 2012	23	2012
Polarization engineered 1-dimensional electron gas arrays DN Nath, PS Park, M Esposto, D Brown, S Keller, UK Mishra, S Rajan Journal of Applied Physics 111 (4), 2012	11	2012
III-nitride tunnel diodes with record forward tunnel current density S Krishnamoorthy, PS Park, S Rajan 69th Device Research Conference, 1-2, 2011	5	2011

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