| Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ... Applied Physics Express 6 (1), 016501, 2012 | 71 | 2012 |
| Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ... Applied Physics Express 6 (11), 116501, 2013 | 45 | 2013 |
| High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate S Arulkumaran, K Ranjan, GI Ng, CMM Kumar, S Vicknesh, SB Dolmanan, ... IEEE Electron Device Letters 35 (10), 992-994, 2014 | 39 | 2014 |
| Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ... Applied Physics Letters 106 (8), 2015 | 28 | 2015 |
| Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015 | 23 | 2015 |
| In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ... 2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014 | 21 | 2014 |
| Electron velocity of 6× 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors S Arulkumaran, GI Ng, M Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, ... Applied Physics Letters 106 (5), 2015 | 20 | 2015 |
| Cathodoluminescence of 2-inch Ultraviolet-Light-Source Tube Based on the Integration of AlGaN Materials and Carbon Nanotubes Field Emitters NLJKL Wael Z. Tawfik, C. M. Manoj Kumar, Joonmo Park, Sang Kyun Shim ... Journal of Materials Chemistry C, 11540, 2019 | 19* | 2019 |
| Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu Applied Physics Express 8 (4), 041001, 2015 | 15 | 2015 |
| High-Photocurrent and Wide-Bandwidth UTC Photodiodes with Dipole-Doped Structure JG Q. Q. Meng, H. Wang, C. Y. Liu, K. S. Ang, X. Guo, B. Gao, Y. Tian, C. M ... IEEE Photonic Technology Letters 26 (19), 1952, 2014 | 15 | 2014 |
| GaN-on-silicon integration technology GI Ng, S Arulkumaran, S Vicknesh, H Wang, KS Ang, CMM Kumar, ... 2012 IEEE International Symposium on Radio-Frequency Integration Technology …, 2012 | 10 | 2012 |
| Nanopatterned sapphire substrate to enhance the efficiency of AlGaN-based UVC light source tube with CNT electron-beam SK Shim, WZ Tawfik, CMM Kumar, S Liu, X Wang, N Lee, JK Lee Journal of Materials Chemistry C 8 (48), 17336-17341, 2020 | 8 | 2020 |
| Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111) SAGIN L. Ravikiran, K. Radhakrishnan,S. Munawar Basha, N. Dharmarasu, M ... Journal of Applied Physics 117, 245305, 2015 | 6 | 2015 |
| High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells Y Wang, Y Yuan, R Tao, S Liu, T Wang, S Sheng, P Quach, MK Cm, ... Advanced Optical Materials 10 (18), 2200011, 2022 | 4 | 2022 |
| Optimized aluminum reflector for enhancement of UVC cathodoluminescence based-AlGaN materials with carbon nanotube field emitters MKC Mohan, SK Shim, JK Lee, N Jang, N Lee, WZ Tawfik Molecules 26 (13), 4025, 2021 | 4 | 2021 |
| MOCVD growth and fabrication of high power MUTC photodiodes using InGaAs-InP system N Singh, CKF Ho, GX Tina, MKC Mohan, KEK Lee, H Wang, HQ Lam Journal of Nanomaterials 16 (1), 367-367, 2016 | 3 | 2016 |
| Ultraviolet-Cathodoluminescent 330 nm light source from a 2-inch wide CNT electron-beam emission under DC electric field MKC Mohan, SK Shim, MU Cho, TK Kim, JS Kwak, J Park, N Jang, ... Current Applied Physics 28, 72-77, 2021 | 2 | 2021 |
| Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ... | 1 | 2015 |
| AlGaAs/InGaAs thermopiles for infrared imaging using surface bulk micromachining technology KS Ang, R Hofstetter, H Wang, K Manoj, LN Retnam, GI Ng, M Abe 2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS …, 2013 | 1 | 2013 |
| Fabrication and characterization of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped structure at InGaAs/InP interface QQ Meng, CY Liu, H Wang, KS Ang, K Manoj, TX Guo 2013 IEEE 5th International Nanoelectronics Conference (INEC), 338-341, 2013 | 1 | 2013 |
Geok Ing NgNanyang Technological UniversityE-mail confirmado em ntu.edu.sg
