CMOS-based active pixel for low-light-level detection: analysis and measurements N Faramarzpour, MJ Deen, S Shirani, Q Fang, LWC Liu, ...
IEEE Transactions on Electron Devices 54 (12), 3229-3237, 2007
147 2007 Light emission from a poly-silicon device with carrier injection engineering K Xu, L Huang, Z Zhang, J Zhao, Z Zhang, LW Snyman, JW Swart
Materials Science and Engineering: B 231, 28-31, 2018
143 2018 Carbon nanotubes growth by chemical vapor deposition using thin film nickel catalyst SA Moshkalyov, ALD Moreau, HR Guttiérrez, MA Cotta, JW Swart
Materials Science and Engineering: B 112 (2-3), 147-153, 2004
90 2004 Semicondutores: Fundamentos, técnicas e aplicações JW Swart
Editora da UNICAMP, Campinas, 2008
81 2008 Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature RC Teixeira, I Doi, MBP Zakia, JA Diniz, JW Swart
Materials Science and Engineering: B 112 (2-3), 160-164, 2004
67 2004 Ultralow-power LSI technology with silicon on thin buried oxide (SOTB) CMOSFET T Ishigaki, R Tsuchiya, Y Morita, N Sugii, S Kimura, JW Swart
Solid State Circuits Technologies, 146-156, 2010
51 2010 Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in SA Moshkalyov, JA Diniz, JW Swart, PJ Tatsch, M Machida
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
47 1997 Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar JA Diniz, JW Swart, KB Jung, J Hong, SJ Pearton
Solid-State Electronics 42 (11), 1947-1951, 1998
44 1998 Silicon nitride etching in high- and low-density plasmas using C Reyes-Betanzo, SA Moshkalyov, JW Swart, ACS Ramos
Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films 21 (2 …, 2003
43 2003 CF4 plasma etching of materials used in microelectronics manufacturing OV Balachova, MAR Alves, JW Swart, ES Braga, L Cescato
Microelectronics journal 31 (3), 213-215, 2000
39 2000 Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC Y Chen, D Xu, K Xu, N Zhang, S Liu, J Zhao, Q Luo, LW Snyman, ...
Chinese Physics B 28 (10), 107801, 2019
36 2019 Energia solar fotovoltaica de terceira geração F Ely, J Swart
Instituto de Engenheiros Eletricistas e Eletrônicos ou Instituto de …, 2014
34 2014 Silicon nitride deposited by ECR–CVD at room temperature for LOCOS isolation technology MA Pereira, JA Diniz, I Doi, JW Swart
Applied surface science 212, 388-392, 2003
34 2003 Platinum thin films deposited on silicon oxide by focused ion beam: characterization and application AR Vaz, MM da Silva, J Leon, SA Moshkalev, JW Swart
Journal of materials science 43, 3429-3434, 2008
32 2008 The influence of impurities on cobalt silicide formation WJ Freitas, JW Swart
Journal of the Electrochemical Society 138 (10), 3067, 1991
30 1991 Different carbon nanostructured materials obtained in catalytic chemical vapor deposition C Veríssimo, SA Moshkalyo, A Ramos, JL Gonçalves, OL Alves, JW Swart
Journal of the Brazilian Chemical Society 17, 1124-1132, 2006
28 2006 Analysis of the etching mechanisms of tungsten in fluorine containing plasmas P Verdonck, J Swart, G Brasseur, P De Geyter
Journal of the Electrochemical Society 142 (6), 1971, 1995
24 1995 A multisampling time-domain CMOS imager with synchronous readout circuit FS Campos, O Marinov, N Faramarzpour, F Saffih, MJ Deen, JW Swart
Proceedings of the 20th annual conference on Integrated circuits and systems …, 2007
23 2007 Photodetection with gate-controlled lateral BJTs from standard CMOS technology F de Souza Campos, N Faramarzpour, O Marinov, MJ Deen, JW Swart
IEEE Sensors Journal 13 (5), 1554-1563, 2012
22 2012 Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching C Fischer, JW Menezes, SA Moshkalev, C Verissimo, AR Vaz, JW Swart
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
21 2009 