Emmanouil Dimakis
Emmanouil Dimakis
Group leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden
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Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates
E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ...
Nano letters 14 (5), 2604-2609, 2014
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ...
Journal of applied physics 97 (11), 113520, 2005
Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111)
E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ...
Crystal growth & design 11 (9), 4001-4008, 2011
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth
E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ...
Journal of crystal growth 278 (1-4), 426-430, 2005
Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays
J Henson, E Dimakis, J DiMaria, R Li, S Minissale, L Dal Negro, ...
Optics express 18 (20), 21322-21329, 2010
Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas
Applied physics letters 88 (19), 191918, 2006
Growth and properties of near‐UV light emitting diodes based on InN/GaN quantum wells
E Dimakis, AY Nikiforov, C Thomidis, L Zhou, DJ Smith, J Abell, CK Kao, ...
physica status solidi (a) 205 (5), 1070-1073, 2008
InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy
E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
physica status solidi (a) 203 (1), 102-105, 2006
Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of (0001) substrates
S Mikroulis, A Georgakilas, A Kostopoulos, V Cimalla, E Dimakis, ...
Applied Physics Letters 80 (16), 2886-2888, 2002
Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy
E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas
Applied Physics Letters 86 (13), 133104, 2005
Plasmon-enhanced light emission based on lattice resonances of silver nanocylinder arrays
J Henson, J DiMaria, E Dimakis, TD Moustakas, R Paiella
Optics letters 37 (1), 79-81, 2012
Shell-doping of GaAs nanowires with Si for n-type conductivity
E Dimakis, M Ramsteiner, A Tahraoui, H Riechert, L Geelhaar
Nano Research 5 (11), 796-804, 2012
Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys
M Androulidaki, NT Pelekanos, K Tsagaraki, E Dimakis, E Iliopoulos, ...
physica status solidi c 3 (6), 1866-1869, 2006
Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy
T Kehagias, A Delimitis, P Komninou, E Iliopoulos, E Dimakis, ...
Applied Physics Letters 86 (15), 151905, 2005
The role of nucleation temperature in In-face InN-on-GaN (0001) growth by plasma-assisted molecular beam epitaxy
E Dimakis, G Konstantinidis, K Tsagaraki, A Adikimenakis, E Iliopoulos, ...
Superlattices and Microstructures 36 (4-6), 497-507, 2004
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
L Balaghi, G Bussone, R Grifone, R Hübner, J Grenzer, M Ghorbani-Asl, ...
Nature communications 10 (1), 1-10, 2019
Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles
J Henson, JC Heckel, E Dimakis, J Abell, A Bhattacharyya, G Chumanov, ...
Applied Physics Letters 95 (15), 151109, 2009
Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure
A Kamińska, G Franssen, T Suski, I Gorczyca, NE Christensen, A Svane, ...
Physical Review B 76 (7), 075203, 2007
Structural properties of 10 μm thick InN grown on sapphire (0001)
E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ...
Superlattices and Microstructures 40 (4-6), 246-252, 2006
Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates
G Bussone, H Schäfer-Eberwein, E Dimakis, A Biermanns, D Carbone, ...
Nano letters 15 (2), 981-989, 2015
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