Electrostatic mechanisms responsible for device degradation in proton irradiated AlGaN/AlN/GaN HEMTs A Kalavagunta, A Touboul, L Shen, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 55 (4), 2106-2112, 2008
82 2008 Dose rate effects in bipolar oxides: Competition between trap filling and recombination J Boch, F Saigné, AD Touboul, S Ducret, JF Carlotti, M Bernard, ...
Applied physics letters 88 (23), 232113, 2006
70 2006 Determining realistic parameters for the double exponential law that models transient current pulses F Wrobel, L Dilillo, AD Touboul, V Pouget, F Saigné
IEEE Transactions on Nuclear Science 61 (4), 1813-1818, 2014
58 2014 Testing a commercial MRAM under neutron and alpha radiation in dynamic mode G Tsiligiannis, L Dilillo, A Bosio, P Girard, A Todri, A Virazel, SS McClure, ...
IEEE Transactions on Nuclear Science 60 (4), 2617-2622, 2013
49 2013 The use of a dose-rate switching technique to characterize bipolar devices J Boch, YG Velo, F Saigné, NJH Roche, RD Schrimpf, JR Vaille, ...
IEEE transactions on Nuclear Science 56 (6), 3347-3353, 2009
41 2009 Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories F Wrobel, J Gasiot, F Saigné, AD Touboul
Applied Physics Letters 93 (6), 064105, 2008
30 2008 Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions S Kuboyama, E Muzuta, Y Nakada, H Shindou, A Michez, J Boch, ...
IEEE Transactions on Nuclear Science, 2019
27 2019 Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation A Carvalho, M Marinoni, AD Touboul, C Guasch, H Lebius, M Ramonda, ...
Applied physics letters 90 (7), 073116, 2007
27 2007 Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface JF Carlotti, AD Touboul, M Ramonda, M Caussanel, C Guasch, J Bonnet, ...
Applied physics letters 88 (4), 041906, 2006
24 2006 Growth of silicon bump induced by swift heavy ion at the silicon oxide-Si interface JF Carlotti, A Touboul, M Ramonda, C Guasch, J Bonnet, J Gasiot
24 * 2006 Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability AD Touboul, JF Carlotti, M Marinoni, M Caussanel, M Ramonda, ...
Journal of non-crystalline solids 351 (52-54), 3834-3838, 2005
24 2005 Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He M Caussanel, A Canals, SK Dixit, MJ Beck, AD Touboul, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 54 (6), 1925-1930, 2007
23 2007 High-energy heavy ion irradiation-induced structural modifications: A potential physical understanding of latent defects M Marinoni, AD Touboul, D Zander, C Petit, F Wrobel, AMJF Carvalho, ...
IEEE Transactions on Nuclear Science 55 (6), 2970-2974, 2008
21 2008 Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET A Michez, J Boch, S Dhombres, F Saigné, AD Touboul, JR Vaillé, ...
Microelectronics Reliability 53 (9-11), 1306-1310, 2013
18 2013 Effects of aging on the XJ Zhou, DM Fleetwood, I Danciu, A Dasgupta, SA Francis, AD Touboul
Applied Physics Letters 91 (17), 173501, 2007
18 2007 Contribution of latent defects induced by high-energy heavy ion irradiation on the gate oxide breakdown M Marinoni, AD Touboul, D Zander, C Petit, AMJF Carvalho, FÉÉ Wrobel, ...
IEEE Transactions on Nuclear Science 56 (4), 2213-2217, 2009
15 2009 Total Ionizing Dose Effect in LDMOS oxides and devices T Borel, S Furic, E Leduc, A Michez, J Boch, A Touboul, B Azais, ...
IEEE Transactions on Nuclear Science, 2019
14 2019 Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions YQ Aguiar, F Wrobel, JL Autran, P Leroux, F Saigné, AD Touboul, ...
Microelectronics Reliability 88, 920-924, 2018
14 2018 Proton-induced single-event degradation in SDRAMs A Rodriguez, F Wrobel, A Samaras, F Bezerra, B Vandevelde, R Ecoffet, ...
IEEE Transactions on Nuclear Science 63 (4), 2115-2121, 2016
14 2016 On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon R Coq Germanicus, P Leclere, Y Guhel, B Boudart, AD Touboul, ...
Journal of Applied Physics 117 (24), 244306, 2015
14 2015 
jerome bochmontpellier universityE-mail confirmado em umontpellier.fr
