| Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature P Chan, V Rienzi, N Lim, HM Chang, M Gordon, SP DenBaars, ... Applied Physics Express 14 (10), 101002, 2021 | 41 | 2021 |
| Germanium-doped metallic ohmic contacts in black phosphorus field-effect transistors with ultra-low contact resistance HM Chang, A Charnas, YM Lin, PD Ye, CI Wu, CH Wu Scientific reports 7 (1), 16857, 2017 | 19 | 2017 |
| Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors HM Chang, KL Fan, A Charnas, DY Peide, YM Lin, CI Wu, CH Wu Journal of Physics D: Applied Physics 51 (13), 135306, 2018 | 17 | 2018 |
| Demonstration of III-nitride red LEDs on Si substrates via strain-relaxed template by InGaN decomposition layer V Rienzi, J Smith, N Lim, HM Chang, P Chan, MS Wong, MJ Gordon, ... Crystals 12 (8), 1144, 2022 | 9 | 2022 |
| High performance MoS2 TFT using graphene contact first process SCL Chih-Shiang Chang Chien, Hsun-Ming Chang, Wei-Ta Lee, Ming-Ru Tang, Chao ... AIP Advances 7 (8), 085018, 2017 | 5 | 2017 |
| Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates N Lim, P Chan, HM Chang, V Rienzi, MJ Gordon, S Nakamura Advanced Photonics Research 4 (3), 2200286, 2023 | 3 | 2023 |
| Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges MS Wong, A Raj, HM Chang, V Rienzi, F Wu, JJ Ewing, ES Trageser, ... AIP Advances 13 (1), 2023 | 3 | 2023 |
| Demonstration of C-plane InGaN-based blue laser diodes grown on a strain-relaxed template HM Chang, P Chan, N Lim, V Rienzi, MJ Gordon, SP DenBaars, ... Crystals 12 (9), 1208, 2022 | 3 | 2022 |
| The scaling of the microLED and the advantage of 2D materials X Xie, HT Chorsi, K Agashiwala, HM Chang, J Kang, JH Chu, I Sarpkaya, ... arXiv preprint arXiv:2101.10077, 2021 | 2 | 2021 |
| Device with doped phosphorene and method for doping phosphorene YM Lin, CH Wu, H Chang, SC Pan US Patent 10,658,470, 2020 | 2 | 2020 |
| Demonstration and optimization of c-plane InGaN based edge emitting laser diodes grown on strain relaxed template HM Chang, P Chan, N Lim, V Rienzi, H Zhang, DA Cohen, MJ Gordon, ... Gallium Nitride Materials and Devices XVIII, 2023 | | 2023 |
| InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss HM Chang, P Chan, N Lim, V Rienzi, H Zhang, DA Cohen, MJ Gordon, ... Crystals 12 (9), 1230, 2022 | | 2022 |
| Device with doped phosphorene and method for doping phosphorene YM Lin, CH Wu, H Chang, SC Pan US Patent 11,152,473, 2021 | | 2021 |
| 黑磷及二維材料電晶體之開發與黑磷及金屬接觸電極 之研究 HM Chang 臺灣大學光電工程學研究所學位論文 2017, 1-70, 2017 | | 2017 |
Philip ChanUniversity of California, Santa BarbaraE-mail confirmado em ucsb.edu
