| Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling S Turuvekere, N Karumuri, AA Rahman, A Bhattacharya, A DasGupta, ... Electron Devices, IEEE Transactions on 60 (10), 3157-3165, 2013 | 254 | 2013 |
| Positive Shift in Threshold Voltage for Reactive-Ion- Sputtered Al2O3/AlInN/GaN MIS-HEMT G Dutta, S Turuvekere, N Karumuri, N DasGupta, A DasGupta IEEE Electron Device Letters 35 (11), 1085-1087, 2014 | 60 | 2014 |
| Evidence of Fowler–Nordheim tunneling in gate leakage current of AlGaN/GaN HEMTs at room temperature S Turuvekere, DS Rawal, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 61 (12), 4291-4294, 2014 | 51 | 2014 |
| A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages ADG Naveen Karumuri, Sreenidhi Turuvekere, Nandita DasGupta IEEE Transactions on Electron Devices 61 (7), 2343-2349, 2014 | 48 | 2014 |
| Effect of barrier layer thickness on gate leakage current in AlGaN/GaN HEMTs S Turuvekere, A DasGupta, N DasGupta IEEE Transactions on Electron Devices 62 (10), 3449-3452, 2015 | 24 | 2015 |
| Reactive ion etching of GaN in SF6+ Ar and SF6+ N2 plasma T Sreenidhi, K Baskar, A DasGupta, N DasGupta Semiconductor science and technology 23 (12), 125019, 2008 | 18 | 2008 |
| Temperature and bias dependent gate leakage in AlInN/GaN high electron mobility transistor T Sreenidhi, A DasGupta, N DasGupta 2012 International Conference on Emerging Electronics, 1-4, 2012 | 7 | 2012 |
| An analytical charge control model for AlGaN/GaN HEMT including the gate bias dependence on polarization charge N Karumuri, T Sreenidhi, N DasGupta, A DasGupta 2012 International Conference on Emerging Electronics, 1-4, 2012 | 4 | 2012 |
| High pressure oxidation of 4H-SiC in nitric acid vapor KK Selvi, T Sreenidhi, N DasGupta, H Ryssel, A Bauer Japanese Journal of Applied Physics 50 (10S), 10PG07, 2011 | 4 | 2011 |
| Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED T Sreenidhi, J Chatterjee, A DasGupta, N DasGupta 16th International Workshop on Physics of Semiconductor Devices 8549, 546-551, 2012 | 2 | 2012 |
| Charge based compact modeling of gate leakage mechanism in AlGaN/GaN HEMTs A Debnath, S Turuvekre, N DasGupta, A DasGupta 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2018 | 1 | 2018 |
| Extraction of Output Conductance Parameters From Simple DC IV Measurements for a Compact Model S Turuvekere, AS Pratiyush, S Srihari, A Sundaram 2022 IEEE International Conference on Emerging Electronics (ICEE), 2023 | | 2023 |
| Reduction in Gate Leakage Current of AlGaN/GaN HEMT by Rapid Thermal Oxidation T Sreenidhi, AA Rahman, A Bhattacharya, A DasGupta, N DasGupta MRS Online Proceedings Library (OPL) 1635, 3-8, 2014 | | 2014 |
| Electrical and reliability characteristics of oxide grown by High Pressure Oxidation of SiC in nitric acid vapor with different gas ambients KK Selvi, T Sreenidhi, N DasGupta 16th International Workshop on Physics of Semiconductor Devices 8549, 436-441, 2012 | | 2012 |
| Thermally oxidized LPCVD silicon as gate dielectric on GaN T Sreenidhi, A DasGupta, N DasGupta 2009 2nd International Workshop on Electron Devices and Semiconductor …, 2009 | | 2009 |
| Reduced charge trapping in GaN MIS using gate oxide deposition technique T Sreenidhi, K Baskar, A DasGupta, N DasGupta Electronics letters 45 (10), 1, 2009 | | 2009 |
| Reactive ion etching of GaN in SF {sub 6}+ Ar and SF {sub 6}+ N {sub 2} plasma T Sreenidhi, A DasGupta, N DasGupta, K Baskar Semiconductor Science and Technology 23, 2008 | | 2008 |
| Reactive ion etching of GaN using SF6+N2/Ar T Sreenidhi, N DasGupta, K Baskar 2007 International Workshop on Physics of Semiconductor Devices, 399-402, 2007 | | 2007 |
Amitava DasGuptaProfessor, IIT MadrasE-mail confirmado em ee.iitm.ac.in
