| Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures R People, JC Bean Applied Physics Letters 47 (3), 322-324, 1985 | 2177 | 1985 |
| GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984 | 943 | 1984 |
| Band alignments of coherently strained GexSi1−x/Si heterostructures on <001> GeySi1−y substrates R People, JC Bean Applied physics letters 48 (8), 538-540, 1986 | 425 | 1986 |
| Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures DV Lang, R People, JC Bean, AM Sergent Applied Physics Letters 47 (12), 1333-1335, 1985 | 404 | 1985 |
| Modulation doping in GexSi1−x/Si strained layer heterostructures R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ... Applied physics letters 45 (11), 1231-1233, 1984 | 361 | 1984 |
| Semiconductors for room temperature nuclear detector applications TE Schlesinger Semicond. Semimetals 43, 240, 1995 | 326 | 1995 |
| Silicon-based semiconductor heterostructures: column IV bandgap engineering JC Bean Proceedings of the IEEE 80 (4), 571-587, 1992 | 324 | 1992 |
| Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors DH Auston, AM Johnson, PR Smith, JC Bean Applied Physics Letters 37 (4), 371-373, 1980 | 308 | 1980 |
| Observation of order-disorder transitions in strained-semiconductor systems A Ourmazd, JC Bean Physical review letters 55 (7), 765, 1985 | 307 | 1985 |
| Raman scattering from GexSi1−x/Si strained‐layer superlattices F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson Applied physics letters 45 (10), 1138-1140, 1984 | 295 | 1984 |
| Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984 | 288 | 1984 |
| Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff Physical Review B 53 (24), 16334, 1996 | 287 | 1996 |
| GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986 | 274 | 1986 |
| Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson MRS Online Proceedings Library (OPL) 10, 1981 | 266 | 1981 |
| Misfit dislocations in lattice-mismatched epitaxial films R Hull, JC Bean Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992 | 235 | 1992 |
| Growth of single‐crystal CoSi2 on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982 | 225 | 1982 |
| Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon JC Bean, GE Becker, PM Petroff, TE Seidel Journal of Applied Physics 48 (3), 907-913, 1977 | 218 | 1977 |
| New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984 | 210 | 1984 |
| Stability of semiconductor strained‐layer superlattices R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson Applied physics letters 48 (1), 56-58, 1986 | 192 | 1986 |
| Silicon/metal silicide heterostructures grown by molecular beam epitaxy JC Bean, JM Poate Applied Physics Letters 37 (7), 643-646, 1980 | 180 | 1980 |
Leonard FeldmanProfessor of Physics and Materials ScienceE-mail confirmado em rutgers.edu
