| Ultrathin junctionless nanowire FET model, including 2-D quantum confinements D Shafizade, M Shalchian, F Jazaeri IEEE Transactions on Electron Devices 66 (9), 4101-4106, 2019 | 19 | 2019 |
| Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs D Shafizade, M Shalchian, F Jazaeri Solid-State Electronics 185, 108153, 2021 | 10 | 2021 |
| Exhaustive characterization of modified Si vacancies in 4H-SiC J Davidsson, R Babar, D Shafizadeh, IG Ivanov, V Ivády, R Armiento, ... Nanophotonics 11 (20), 4565-4580, 2022 | 8 | 2022 |
| Modified divacancies in 4H-SiC NT Son, D Shafizadeh, T Ohshima, IG Ivanov Journal of Applied Physics 132 (2), 2022 | 5 | 2022 |
| Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement W Alshebly, M Shalchian, D Shafizade, A Chalechale, F Jazaeri Solid-State Electronics 200, 108544, 2023 | 2 | 2023 |
Farzan JazaeriResearch Scientist, EPFLE-mail confirmado em epfl.ch
