On the enhanced electron mobility in strained-silicon inversion layers MV Fischetti, F Gamiz, W Hänsch
Journal of applied physics 92 (12), 7320-7324, 2002
283 2002 Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion F Gamiz, MV Fischetti
Journal of Applied Physics 89 (10), 5478-5487, 2001
257 2001 Semiconductor-on-insulator materials for nanoelectronics applications A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer Berlin Heidelberg, 2011
169 2011 Surface roughness at the F Gámiz, JB Roldán, JA López-Villanueva, P Cartujo-Cassinello, ...
Journal of Applied Physics 86 (12), 6854-6863, 1999
147 1999 Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
126 2001 Direct and trap-assisted elastic tunneling through ultrathin gate oxides F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
116 2002 A-RAM: Novel capacitor-less DRAM memory N Rodriguez, S Cristoloveanu, F Gamiz
2009 IEEE International SOI Conference, 1-2, 2009
102 2009 Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's F Gámiz, JA López-Villanueva, JB Roldán, JE Carceller, P Cartujo
IEEE Transactions on Electron Devices 45 (5), 1122-1126, 1998
102 1998 Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
101 2007 Effects of the inversion-layer centroid on the performance of double-gate MOSFETs JA López-Villanueva, P Cartujo-Cassinello, F Gámiz, J Banqueri, ...
IEEE Transactions on Electron Devices 47 (1), 141-146, 2000
101 2000 Effects of the inversion layer centroid on MOSFET behavior JA Lopez-Villanueva, P Cartujo-Casinello, J Banqueri, F Gamiz, ...
IEEE Transactions on Electron Devices 44 (11), 1915-1922, 1997
101 1997 A comprehensive model for Coulomb scattering in inversion layers F Gámiz, JA López‐Villanueva, JA Jiménez‐Tejada, I Melchor, A Palma
Journal of applied physics 75 (2), 924-934, 1994
100 1994 A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
95 2007 Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of Applied Physics 100 (1), 2006
91 2006 Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
85 2002 Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers F Gamiz, JB Roldán, P Cartujo-Cassinello, JA López-Villanueva, ...
Journal of Applied Physics 89 (3), 1764-1770, 2001
80 2001 A simple subthreshold swing model for short channel MOSFETs A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz
Solid-State Electronics 45 (3), 391-397, 2001
79 2001 A Monte Carlo study on the electron‐transport properties of high‐performance strained‐Si on relaxed Si1−x Gex JB Roldán, F Gámiz, JA López‐Villanueva, JE Carceller
Journal of applied physics 80 (9), 5121-5128, 1996
77 1996 Modeling effects of electron-velocity overshoot in a MOSFET JB Roldan, F Gamiz, JA Lopez-Villanueva, JE Carceller
IEEE Transactions on Electron Devices 44 (5), 841-846, 1997
74 1997 An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 2013
73 2013 