Modeling of short-channel effects in DG MOSFETs: Green’s function method versus scale length model N Pandey, HH Lin, A Nandi, Y Taur
IEEE Transactions on Electron Devices 65 (8), 3112-3119, 2018
34 2018 Modeling of DG MOSFET Y Taur, HH Lin
IEEE Transactions on Electron Devices 65 (5), 1714-1720, 2018
25 2018 Effect of source–drain doping on subthreshold characteristics of short-channel DG MOSFETs HH Lin, Y Taur
IEEE Transactions on Electron Devices 64 (12), 4856-4860, 2017
24 2017 Surface nonuniformity-induced frequency dispersion in accumulation capacitance for silicon MOS (n) capacitor HH Lin, JG Hwu
IEEE Transactions on Electron Devices 63 (7), 2844-2851, 2016
4 2016 Non-Uniform Hole Current Induced Negative Capacitance Phenomenon Examined by Photo-Illumination in MOS(n) HH Lin, YK Lin, JG Hwu
ECS Transactions 69 (5), 261-265, 2015
3 2015 Characterization of ambient light-induced inversion current in MOS (n) tunneling diode with enhanced oxide thickness-dependent performance YK Lin, HH Lin, JG Hwu
IEEE Transactions on Electron Devices 63 (1), 384-389, 2015
2 2015 Influence of etching-induced surface damage on device performance with consideration of minority carriers within diffusion length from depletion edge HH Lin, JG Hwu
IEEE Transactions on Electron Devices 62 (2), 634-640, 2015
1 2015 Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effect HH Lin, JG Hwu
ECS Transactions 75 (5), 63, 2016
2016 Investigation of Inversion Characteristics of Non-planar MOS Structures HH Lin, JG Hwu
Electronic Devices and Materials Symposium - IEDMS 2013 Section 5, Paper No.3., 2013
2013 在非平面矽基板生長閘極氧化層之金氧半電容元件於反轉區之特性探討 HH Lin
臺灣大學電子工程學研究所學位論文, 1-76, 2013
2013 Effect of coating thickness of Al-doped Li N Pannirselvam, B SudalaiGunaseelan, J Rajprasad, G Li, J Xu, L Bai, ...
