| Direct-bandgap light-emitting germanium in tensilely strained nanomembranes JR Sánchez-Pérez, C Boztug, F Chen, FF Sudradjat, DM Paskiewicz, ... Proceedings of the National Academy of Sciences 108 (47), 18893-18898, 2011 | 302 | 2011 |
| Tensilely strained germanium nanomembranes as infrared optical gain media C Boztug, JR Sánchez‐Pérez, FF Sudradjat, RB Jacobson, ... Small 9 (4), 622-630, 2013 | 77 | 2013 |
| Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells FF Sudradjat, W Zhang, J Woodward, H Durmaz, TD Moustakas, R Paiella Applied Physics Letters 100 (24), 2012 | 74 | 2012 |
| Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications P Sookchoo, FF Sudradjat, AM Kiefer, H Durmaz, R Paiella, MG Lagally ACS nano 7 (3), 2326-2334, 2013 | 31 | 2013 |
| Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures F Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ... Journal of Applied Physics 108 (10), 2010 | 31 | 2010 |
| Single-layer-coated beam splitters for the division-of-amplitude photopolarimeter RMA Azzam, FF Sudradjat Applied Optics 44 (2), 190-196, 2005 | 29 | 2005 |
| Pixel array of ultraviolet light emitting devices DA Collins, L Zhang, F Sudradjat US Patent 9,455,300, 2016 | 21 | 2016 |
| Reflection coefficients of p- and s-polarized light by a quarter-wave layer: explicit expressions and application to beam splitters RMA Azzam, FF Sudradjat Applied optics 47 (8), 1103-1108, 2008 | 9 | 2008 |
| Sequential tunneling transport in GaN/AlGaN quantum cascade structures FF Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ... physica status solidi c 9 (3‐4), 588-591, 2012 | 6 | 2012 |
| Direct-bandgap germanium active layers pumped above transparency based on tensilely strained nanomembranes C Boztug, F Chen, JR Sanchez-Perez, FF Sudradjat, DM Paskiewicz, ... CLEO: Applications and Technology, PDPA2, 2011 | 4 | 2011 |
| Semiconductor device and a method of making a semiconductor device DA Collins, F Sudradjat, RC Walker, Y Liao US Patent 9,627,579, 2017 | 3 | 2017 |
| Quarter-wave layers with 50% reflectance for obliquely incident unpolarized light RMA Azzam, FF Sudradjat JOSA A 24 (3), 850-855, 2007 | 3 | 2007 |
| Prism spectroscopic ellipsometer RMA Azzam, FF Sudradjat, MN Uddin Thin solid films 455, 54-60, 2004 | 3 | 2004 |
| Ultraviolet emitting device with shaped encapsulant F Sudradjat, S Liu, DA Collins US Patent 10,062,817, 2018 | 2 | 2018 |
| Principal angles and principal azimuths of frustrated total internal reflection and optical tunneling by an embedded low-index thin film RMA Azzam, FF Sudradjat JOSA A 28 (6), 1256-1261, 2011 | 2 | 2011 |
| Bilayer pellicle and bilayer-coated prism beamsplitters for the division-of-amplitude photopolarimeter RMA Azzam, A De, FF Sudradjat Optical Engineering 44 (7), 073802-073802-9, 2005 | 2 | 2005 |
| Uv fluid disinfection module DA Collins, L Zhang, WK Chai, F Sudradjat, Y Liao US Patent App. 16/363,949, 2020 | 1 | 2020 |
| Terahertz optoelectronic devices based on intersubband transitions in III-nitride semiconductors FF Sudradjat Boston University, 2013 | 1 | 2013 |
| Pixel array of ultraviolet light emitting devices DA Collins, L Zhang, F Sudradjat US Patent 10,490,597, 2019 | | 2019 |
| Ultraviolet emitting device with shaped encapsulant F Sudradjat, S Liu, DA Collins US Patent 10,454,005, 2019 | | 2019 |
