Experimental demonstration of capacitorless A2RAM cells on silicon-on-insulator N Rodriguez, C Navarro, F Gamiz, F Andrieu, O Faynot, S Cristoloveanu
IEEE Electron Device Letters 33 (12), 1717-1719, 2012
68 2012 A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
58 2018 Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet
Solid-State Electronics 128, 155-162, 2017
48 2017 Extended Analysis of the C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
45 2017 Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu
Journal of Applied Physics 118 (18), 2015
39 2015 Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ...
Nature Electronics 2 (9), 412-419, 2019
37 2019 C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
35 2017 Experimental Demonstration of Operational Z2 -FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
32 2018 Reconfigurable field effect transistor for advanced CMOS: A comparison with FDSOI devices C Navarro, S Barraud, S Martinie, J Lacord, MA Jaud, M Vinet
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
27 2016 Experimental developments of A2RAM memory cells on SOI and bulk substrates N Rodriguez, F Gamiz, C Navarro, C Marquez, F Andrieu, O Faynot, ...
Solid-State Electronics 103, 7-14, 2015
22 2015 Multibranch mobility analysis for the characterization of FDSOI transistors C Navarro, N Rodriguez, A Ohata, F Gamiz, F Andrieu, ...
IEEE Electron Device Letters 33 (8), 1102-1104, 2012
19 2012 Low-power Z2-FET capacitorless 1T-DRAM MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
18 2017 InGaAs capacitor-less DRAM cells TCAD demonstration C Navarro, S Navarro, C Marquez, L Donetti, C Sampedro, S Karg, H Riel, ...
IEEE Journal of the Electron Devices Society 6, 884-892, 2018
17 2018 Self-heating effects in ultrathin FD SOI transistors N Rodriguez, C Navarro, F Andrieu, O Faynot, F Gamiz, S Cristoloveanu
IEEE 2011 International SOI Conference, 1-2, 2011
17 2011 Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell S Navarro, C Navarro, C Marquez, N Salazar, P Galy, S Cristoloveanu, ...
IEEE Electron Device Letters 40 (7), 1084-1087, 2019
16 2019 Thorough understanding of retention time of Z2FET memory operation M Duan, C Navarro, B Cheng, F Adamu-Lema, X Wang, VP Georgiev, ...
IEEE Transactions on Electron Devices 66 (1), 383-388, 2018
16 2018 Fully depleted SOI characterization by capacitance analysis of pin gated diodes C Navarro, M Bawedin, F Andrieu, J Cluzel, S Cristoloveanu
IEEE Electron Device Letters 36 (1), 5-7, 2014
16 2014 Investigating the transient response of Schottky barrier back-gated MoS2 transistors C Marquez, N Salazar, F Gity, C Navarro, G Mirabelli, JC Galdon, R Duffy, ...
2D Materials 7 (2), 025040, 2020
15 2020 Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors A Ohata, N Rodriguez, C Navarro, L Donetti, F Gamiz, ...
Journal of Applied Physics 113 (14), 2013
15 2013 3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2 -FETs C Navarro, S Navarro, C Marquez, JL Padilla, P Galy, F Gamiz
IEEE Transactions on Electron Devices 66 (6), 2513-2519, 2019
14 2019 
Francisco GamizProfessor of ElectronicsE-mail confirmado em ugr.es
