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Ribhu Sharma
Ribhu Sharma
University of Florida; Infineon Technologies
Verified email at ufl.edu
Title
Cited by
Cited by
Year
Comparison of dual-stack dielectric field plates on β-Ga2O3 Schottky rectifiers
PH Carey, J Yang, F Ren, R Sharma, M Law, SJ Pearton
ECS Journal of Solid State Science and Technology 8 (7), Q3221, 2019
452019
Effect of probe geometry during measurement of> 100 A Ga2O3 vertical rectifiers
R Sharma, M Xian, C Fares, ME Law, M Tadjer, KD Hobart, F Ren, ...
Journal of Vacuum Science & Technology A 39 (1), 2021
442021
Thermal simulations of high current β-Ga2O3 Schottky rectifiers
R Sharma, E Patrick, ME Law, J Yang, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 8 (7), Q3195, 2019
402019
Damage recovery and dopant diffusion in Si and Sn ion implanted β-Ga2O3
MJ Tadjer, C Fares, NA Mahadik, JA Freitas, D Smith, R Sharma, ME Law, ...
ECS Journal of Solid State Science and Technology 8 (7), Q3133, 2019
352019
Effects of fluorine incorporation into β-Ga2O3
J Yang, C Fares, F Ren, R Sharma, E Patrick, ME Law, SJ Pearton, ...
Journal of Applied Physics 123 (16), 2018
352018
The role of annealing ambient on diffusion of implanted Si in β-Ga2O3
R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton
AIP Advances 9 (8), 2019
322019
Diffusion of dopants and impurities in β-Ga2O3
R Sharma, ME Law, F Ren, AY Polyakov, SJ Pearton
Journal of Vacuum Science & Technology A 39 (6), 2021
292021
Diffusion of implanted Ge and Sn in β-Ga2O3
R Sharma, ME Law, M Xian, M Tadjer, EA Anber, D Foley, AC Lang, ...
Journal of Vacuum Science & Technology B 37 (5), 2019
252019
Optimization of edge termination techniques for β-Ga2O3 Schottky rectifiers
R Sharma, EE Patrick, ME Law, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 8 (12), Q234, 2019
212019
Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3
R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 6 (12), P794, 2017
162017
Radiation damage in the ultra-wide bandgap semiconductor Ga2O3
X Xia, JS Li, R Sharma, F Ren, MAJ Rasel, S Stepanoff, N Al-Mamun, ...
ECS Journal of Solid State Science and Technology 11 (9), 095001, 2022
152022
Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers
X Xia, M Xian, C Fares, R Sharma, ME Law, F Ren, SJ Pearton
Journal of Vacuum Science & Technology A 39 (6), 2021
112021
Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers
R Sharma, M Xian, ME Law, M Tadjer, F Ren, SJ Pearton
Journal of Vacuum Science & Technology A 38 (6), 2020
102020
AIP Adv. 9, 085111 (2019)
R Sharma, ME Law, C Fares, M Tadjer, F Ren, A Kuramata, SJ Pearton
8
Effect of biased field rings to improve charge removal after heavy-ion strikes in vertical geometry β-Ga2O3 rectifiers
R Sharma, JS Li, ME Law, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 12 (3), 035003, 2023
22023
Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers
R Sharma, E Patlick, J Yang, F Ren, M Law, S Pearton
2019 International Conference on Simulation of Semiconductor Processes and …, 2019
22019
Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC
J Yang, C Fares, PH Carey, M Xian, F Ren, MJ Tadjer, YT Chen, YT Liao, ...
ECS Transactions 92 (7), 15, 2019
22019
Thermal effects in Ga2O3 rectifiers and MOSFETs borrowing from GaN
M Xian, F Ren, MJ Tadjer, R Sharma, ME Law, PE Raad, PL Komarov, ...
Thermal Management of Gallium Nitride Electronics, 441-467, 2022
2022
High-voltage high-current vertical geometry Ga2O3 rectifiers
M Xian, C Fares, P Carey IV, F Ren, M Tadjer, YT Liao, CW Chang, J Lin, ...
Oxide-based Materials and Devices XI 11281, 11-21, 2020
2020
An Investigative Study of Dopant Diffusion in Gallium Oxide and Design Optimization of β-Ga2O3 Schottky Rectifiers
R Sharma
University of Florida, 2020
2020
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