Michael Moseley
Michael Moseley
E-mail confirmado em sandia.gov
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Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN
B Gunning, J Lowder, M Moseley, W Alan Doolittle
Applied Physics Letters 101 (8), 082106, 2012
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 141103, 2015
Metal modulation epitaxy growth for extremely high hole concentrations above in GaN
G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look
Applied Physics Letters 93 (17), 172112, 2008
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
M Moseley, J Lowder, D Billingsley, WA Doolittle
Applied Physics Letters 97 (19), 191902, 2010
Transient atomic behavior and surface kinetics of GaN
M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle
Journal of Applied Physics 106 (1), 014905, 2009
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 201102, 2017
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 121102, 2016
Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation
AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 131101, 2013
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 071107, 2018
Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes
M Moseley, A Allerman, M Crawford, JJ Wierer Jr, M Smith, L Biedermann
Journal of Applied Physics 116 (5), 053104, 2014
Observation and control of the surface kinetics of InGaN for the elimination of phase separation
M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ...
Journal of Applied Physics 112 (1), 014909, 2012
Extremely high hole concentrations in c‐plane GaN
E Trybus, WA Doolittle, M Moseley, W Henderson, D Billingsley, ...
physica status solidi c 6 (S2 2), S788-S791, 2009
Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes
JJ Wierer Jr, AA Allerman, I Montaño, MW Moseley
Applied Physics Letters 105 (6), 061106, 2014
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 051104, 2017
Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
MW Moseley, AA Allerman, MH Crawford, JJ Wierer Jr, ML Smith, ...
Journal of Applied Physics 117 (9), 095301, 2015
Comparison of interfacial and bulk ionic motion in analog memristors
JD Greenlee, WL Calley, MW Moseley, WA Doolittle
IEEE transactions on electron devices 60 (1), 427-432, 2012
Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Y Zhang, AA Allerman, S Krishnamoorthy, F Akyol, MW Moseley, ...
Applied Physics Express 9 (5), 052102, 2016
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (19), 191105, 2016
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