Seguir
Kwang Hong Lee, KH Lee
Kwang Hong Lee, KH Lee
Nanyang Technological University, Singapore-Mit alliance for research and technology
E-mail confirmado em smart.mit.edu
Título
Citado por
Citado por
Ano
Low-threshold optically pumped lasing in highly strained germanium nanowires
S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ...
Nature Communications 8 (1), 1845, 2017
1712017
Integration of III–V materials and Si-CMOS through double layer transfer process
KH Lee, S Bao, E Fitzgerald, CS Tan
Japanese Journal of Applied Physics 54 (3), 030209, 2015
982015
Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics
W Li, P Anantha, S Bao, KH Lee, X Guo, T Hu, L Zhang, H Wang, R Soref, ...
Applied physics letters 109 (24), 2016
922016
Electric field directed assembly of an InGaAs LED onto silicon circuitry
CF Edman, RB Swint, C Gurtner, RE Formosa, SD Roh, KE Lee, ...
IEEE Photonics Technology Letters 12 (9), 1198-1200, 2000
862000
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
H Zhou, S Xu, Y Lin, YC Huang, B Son, Q Chen, X Guo, KH Lee, SCK Goh, ...
Optics express 28 (7), 10280-10293, 2020
832020
High-efficiency normal-incidence vertical pin photodetectors on a germanium-on-insulator platform
Y Lin, KH Lee, S Bao, X Guo, H Wang, J Michel, CS Tan
Photonics Research 5 (6), 702-709, 2017
682017
Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer
KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan
Journal of Applied Physics 116 (10), 2014
622014
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon
ACS Photonics 5 (4), 1512-1520, 2018
612018
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber
KH Lee, A Jandl, YH Tan, EA Fitzgerald, CS Tan
Aip Advances 3 (9), 2013
612013
Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
KH Lee, S Bao, B Wang, C Wang, SF Yoon, J Michel, EA Fitzgerald, ...
AIP Advances 6 (2), 2016
592016
Sensitivity enhancement in grating coupled surface plasmon resonance by azimuthal control
F Romanato, KH Lee, HK Kang, G Ruffato, CC Wong
Optics express 17 (14), 12145-12154, 2009
592009
Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
KH Lee, S Bao, GY Chong, YH Tan, EA Fitzgerald, CS Tan
APL Materials 3 (1), 2015
582015
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan
Applied Physics Express 9 (8), 086501, 2016
522016
Little-parks oscillations in an insulator
G Kopnov, O Cohen, M Ovadia, KH Lee, CC Wong, D Shahar
Physical review letters 109 (16), 167002, 2012
492012
A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers
S Bao, Y Wang, K Lina, L Zhang, B Wang, WA Sasangka, KEK Lee, ...
Journal of Semiconductors 42 (2), 023106, 2021
482021
Dark current analysis of germanium-on-insulator vertical pin photodetectors with varying threading dislocation density
B Son, Y Lin, KH Lee, Q Chen, CS Tan
Journal of Applied Physics 127 (20), 2020
432020
Method of manufacturing a substrate
KH Lee, CS Tan, EA Fitzgerald, EKK Lee
US Patent 10,049,947, 2018
432018
The role of polarization on surface plasmon polariton excitation on metallic gratings in the conical mounting
F Romanato, KH Lee, G Ruffato, CC Wong
Applied Physics Letters 96 (11), 2010
432010
GeSn-on-insulator substrate formed by direct wafer bonding
D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo
Applied Physics Letters 109 (2), 2016
422016
Comparative studies of the growth and characterization of germanium epitaxial film on silicon (001) with 0° and 6° offcut
KH Lee, YH Tan, A Jandl, EA Fitzgerald, CS Tan
Journal of electronic materials 42, 1133-1139, 2013
422013
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20