| AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019 | 20 | 2019 |
| Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures R Lingaparthi, N Dharmarasu, K Radhakrishnan, A Ranjan, TLA Seah, ... Applied Physics Letters 118 (12), 2021 | 9 | 2021 |
| Pt/AlGaN/GaN HEMT based ammonia gas sensors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019 | 9 | 2019 |
| Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/ GaN High Electron Mobility Transistors A Ranjan, Ravikiran Lingaparthi, Nethaji Dharmarasu, K. Radhakrishnan Journal of The Electrochemical Society 168, 047502, 2021 | 7 | 2021 |
| Investigation of thin-barrier AlGaN/GaN HEMT heterostructures for enhanced gas-sensing performance A Ranjan, R Lingaparthi, N Dharmarasu, K Radhakrishnan IEEE Sensors Journal 22 (19), 18306-18312, 2022 | 3 | 2022 |
| Effects of various functionalisation layers on ammonia gas sensing using AlGaN/GaN high electron mobility transistors A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu International Journal of Nanotechnology 17 (1), 16-28, 2020 | 1 | 2020 |
| Chemical-mechanical Polishing of N-polar GaN for GaN HEMT on Diamond Bonding A Ranjan, R Lingaparthi, L Huo, C Chan, N Dharmarasu, ... 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), 443-446, 2022 | | 2022 |
| Studies on GaN HEMT based gas sensors for low concentrations of NO2 and NH3 A Ranjan Nanyang Technological University, 2019 | | 2019 |
K RadhakrishnanNanyang technological universityE-mail confirmado em ntu.edu.sg
