| Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems AC Ferrari, F Bonaccorso, V Fal'Ko, KS Novoselov, S Roche, P Bøggild, ... Nanoscale 7 (11), 4598-4810, 2015 | 3440 | 2015 |
| Electronics based on two-dimensional materials G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ... Nature nanotechnology 9 (10), 768-779, 2014 | 3384 | 2014 |
| Graphene-based integrated photonics for next-generation datacom and telecom M Romagnoli, V Sorianello, M Midrio, FHL Koppens, C Huyghebaert, ... Nature Reviews Materials 3 (10), 392-414, 2018 | 416 | 2018 |
| Controlled generation of ap–n junction in a waveguide integrated graphene photodetector S Schuler, D Schall, D Neumaier, L Dobusch, O Bethge, B Schwarz, ... Nano letters 16 (11), 7107-7112, 2016 | 229 | 2016 |
| 50 GBit/s photodetectors based on wafer-scale graphene for integrated silicon photonic communication systems D Schall, D Neumaier, M Mohsin, B Chmielak, J Bolten, C Porschatis, ... Acs Photonics 1 (9), 781-784, 2014 | 224 | 2014 |
| Integrating graphene into semiconductor fabrication lines D Neumaier, S Pindl, MC Lemme Nature materials 18 (6), 525-529, 2019 | 193 | 2019 |
| Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride J Dauber, AA Sagade, M Oellers, K Watanabe, T Taniguchi, D Neumaier, ... Applied Physics Letters 106 (19), 2015 | 184 | 2015 |
| Highly air stable passivation of graphene based field effect devices AA Sagade, D Neumaier, D Schall, M Otto, A Pesquera, A Centeno, ... Nanoscale 7 (8), 3558-3564, 2015 | 159 | 2015 |
| Current saturation and voltage gain in bilayer graphene field effect transistors BN Szafranek, G Fiori, D Schall, D Neumaier, H Kurz Nano letters 12 (3), 1324-1328, 2012 | 158 | 2012 |
| Graphene based low insertion loss electro-absorption modulator on SOI waveguide M Mohsin, D Schall, M Otto, A Noculak, D Neumaier, H Kurz Optics express 22 (12), 15292-15297, 2014 | 145 | 2014 |
| High on/off ratios in bilayer graphene field effect transistors realized by surface dopants BN Szafranek, D Schall, M Otto, D Neumaier, H Kurz Nano letters 11 (7), 2640-2643, 2011 | 130 | 2011 |
| Experimental verification of carrier multiplication in graphene T Plotzing, T Winzer, E Malic, D Neumaier, A Knorr, H Kurz Nano letters 14 (9), 5371-5375, 2014 | 126 | 2014 |
| Identifying suitable substrates for high-quality graphene-based heterostructures L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ... 2D Materials 4 (2), 025030, 2017 | 120 | 2017 |
| Experimental verification of electro-refractive phase modulation in graphene M Mohsin, D Neumaier, D Schall, M Otto, C Matheisen, A Lena Giesecke, ... Scientific reports 5 (1), 10967, 2015 | 114 | 2015 |
| Analogue two-dimensional semiconductor electronics DK Polyushkin, S Wachter, L Mennel, M Paur, M Paliy, G Iannaccone, ... Nature Electronics 3 (8), 486-491, 2020 | 108 | 2020 |
| Non‐covalent functionalization of graphene using self‐assembly of alkane‐amines B Long, M Manning, M Burke, BN Szafranek, G Visimberga, D Thompson, ... Advanced Functional Materials 22 (4), 717-725, 2012 | 102 | 2012 |
| Graphene photodetector integrated on a photonic crystal defect waveguide S Schuler, D Schall, D Neumaier, B Schwarz, K Watanabe, T Taniguchi, ... Acs Photonics 5 (12), 4758-4763, 2018 | 93 | 2018 |
| Velocity saturation in few-layer MoS2 transistor G Fiori, BN Szafranek, G Iannaccone, D Neumaier Applied Physics Letters 103 (23), 2013 | 91 | 2013 |
| Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature BN Szafranek, D Schall, M Otto, D Neumaier, H Kurz Applied Physics Letters 96 (11), 2010 | 90 | 2010 |
| Gate-defined electron–hole double dots in bilayer graphene L Banszerus, B Frohn, A Epping, D Neumaier, K Watanabe, T Taniguchi, ... Nano letters 18 (8), 4785-4790, 2018 | 89 | 2018 |
Zhenxing WangAMO GmbHE-mail confirmado em amo.de
