Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ...
Optics Express 27 (4), 5784-5791, 2019
38 2019 Vertical integration of nitride laser diodes and light emitting diodes by tunnel junctions M Siekacz, G Muziol, H Turski, M Hajdel, M Żak, M Chlipała, M Sawicka, ...
Electronics 9 (9), 1481, 2020
20 2020 Optical properties of III-nitride laser diodes with wide InGaN quantum wells G Muziol, M Hajdel, M Siekacz, K Szkudlarek, S Stanczyk, H Turski, ...
Applied Physics Express 12 (7), 072003, 2019
19 2019 Dependence of InGaN quantum well thickness on the nature of optical transitions in LEDs M Hajdel, M Chlipała, M Siekacz, H Turski, P Wolny, ...
Materials 15 (1), 237, 2021
17 2021 III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ...
Japanese Journal of Applied Physics 61 (SA), SA0801, 2021
15 2021 Nitride LEDs and lasers with buried tunnel junctions H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ...
ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019
14 2019 Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy G Muziol, M Hajdel, H Turski, K Nomoto, M Siekacz, ...
Optics Express 28 (23), 35321-35329, 2020
13 2020 Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes J Slawinska, G Muziol, M Siekacz, H Turski, M Hajdel, M Zak, ...
Optics Express 30 (15), 27004-27014, 2022
11 2022 Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy G Muziol, M Siekacz, K Nowakowski-Szkudlarek, M Hajdel, ...
Materials Science in Semiconductor Processing 91, 387-391, 2019
11 2019 Electrically pumped blue laser diodes with nanoporous bottom cladding M Sawicka, G Muziol, N Fiuczek, M Hajdel, M Siekacz, ...
Optics Express 30 (7), 10709-10722, 2022
7 2022 Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes M Hajdel, G Muzioł, K Nowakowski-Szkudlarek, M Siekacz, P Wolny, ...
Optica Applicata 50 (2), 311-321, 2020
5 2020 Transition between quantum confinement and bulklike behavior in polar quantum wells L Uhlig, J Tepaß, M Hajdel, G Muziol, UT Schwarz
Physical Review B 108 (4), 045304, 2023
3 2023 Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design H Turski, S Bharadwaj, M Siekacz, G Muziol, M Chlipala, M Zak, M Hajdel, ...
Gallium Nitride Materials and Devices XV 11280, 111-116, 2020
3 2020 Bright emission at reverse bias after trailing edge of driving pulse in wide InGaN quantum wells J Tepaß, L Uhlig, M Hajdel, G Muziol, UT Schwarz
physica status solidi (a) 220 (16), 2300042, 2023
2 2023 Influence of electron blocking layer on properties of InGaN-based laser diodes grown by plasma-assisted molecular beam epitaxy M Hajdel, G Muziol, K Nowakowski-Szkudlarek, M Siekacz, ...
Acta Physica Polonica A 136 (4), 593-597, 2019
2 2019 Laser diodes grown on porous GaN by plasma-assisted molecular beam epitaxy N Fiuczek, M Hajdel, A Kafar, G Muziol, M Siekacz, A Feduniewicz-Żmuda, ...
Optical Materials Express 13 (5), 1201-1210, 2023
1 2023 Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content Quantum Wells P Wolny, H Turski, G Muziol, M Sawicka, J Smalc-Koziorowska, J Moneta, ...
Physical review applied 19 (1), 014044, 2023
1 2023 Tunnel junctions for vertically integrated multiple nitrides laser diodes M Siekacz, G Muziol, H Turski, K Nowakowski-Szkudlarek, M Hajdel, ...
2019 Device Research Conference (DRC), 75-76, 2019
1 2019 Investigating the lateral carrier diffusion in MBE grown InGaN quantum wells as function of quantum well width C Becht, UT Schwarz, M Hajdel, G Muziol
Gallium Nitride Materials and Devices XIX, PC1288617, 2024
2024 Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy G Muziol, M Hajdel, M Siekacz, M Zak, K Golyga, A Feduniewicz-Zmuda, ...
Gallium Nitride Materials and Devices XIX, PC1288619, 2024
2024