High Breakdown Voltage (−201) -Ga2O3 Schottky Rectifiers J Yang, S Ahn, F Ren, SJ Pearton, S Jang, A Kuramata
IEEE Electron Device Letters 38 (7), 906-909, 2017
202 2017 High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 2017
195 2017 Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors S Ahn, F Ren, J Kim, S Oh, J Kim, MA Mastro, SJ Pearton
Applied Physics Letters 109 (6), 2016
118 2016 Temperature-dependent characteristics of Ni/Au and Pt/Au Schottky diodes on β-Ga2O3 S Ahn, F Ren, L Yuan, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 6 (1), P68, 2017
101 2017 Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors S Ahn, YH Lin, F Ren, S Oh, Y Jung, G Yang, J Kim, MA Mastro, JK Hite, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
85 2016 Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes J Yang, S Ahn, F Ren, R Khanna, K Bevlin, D Geerpuram, SJ Pearton, ...
Applied Physics Letters 110 (14), 2017
67 2017 Inductively coupled plasma etching of bulk, single-crystal Ga2O3 J Yang, S Ahn, F Ren, S Pearton, R Khanna, K Bevlin, D Geerpuram, ...
Journal of Vacuum Science & Technology B 35 (3), 2017
52 2017 Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors S Ahn, F Ren, S Oh, Y Jung, J Kim, MA Mastro, JK Hite, CR Eddy, ...
Journal of Vacuum Science & Technology B 34 (4), 2016
40 2016 Low dose 60 Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors J Lee, A Yadav, M Antia, V Zaffino, E Flitsiyan, L Chernyak, J Salzman, ...
Radiation Effects and Defects in Solids 172 (3-4), 250-256, 2017
31 2017 Thermal stability of implanted or plasma exposed deuterium in single crystal Ga2O3 S Ahn, F Ren, E Patrick, ME Law, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (2), Q3026, 2016
23 2016 Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide S Ahn, BJ Kim, YH Lin, F Ren, SJ Pearton, G Yang, J Kim, II Kravchenko
Journal of Vacuum Science & Technology B 34 (5), 2016
23 2016 Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 S Ahn, F Ren, E Patrick, ME Law, SJ Pearton, A Kuramata
Applied Physics Letters 109 (24), 2016
21 2016 Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing L Liu, Y Xi, S Ahn, F Ren, BP Gila, SJ Pearton, II Kravchenko
Journal of Vacuum Science & Technology B 32 (5), 2014
19 2014 Extraction of migration energies and role of implant damage on thermal stability of deuterium in Ga2O3 R Sharma, E Patrick, ME Law, S Ahn, F Ren, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 6 (12), P794, 2017
16 2017 Optical signature of the electron injection in Ga2O3 J Lee, E Flitsiyan, L Chernyak, S Ahn, F Ren, L Yuna, SJ Pearton, J Kim, ...
ECS Journal of Solid State Science and Technology 6 (2), Q3049, 2016
15 2016 Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes BJ Kim, YH Hwang, S Ahn, F Ren, SJ Pearton, J Kim, TS Jang
Journal of Vacuum Science & Technology B 33 (5), 2015
15 2015 Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors S Ahn, C Dong, W Zhu, BJ Kim, YH Hwang, F Ren, SJ Pearton, G Yang, ...
Journal of Vacuum Science & Technology B 33 (5), 2015
15 2015 Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors BJ Kim, S Ahn, F Ren, SJ Pearton, G Yang, J Kim
Journal of Vacuum Science & Technology B 34 (4), 2016
13 2016 Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs YH Hwang, S Ahn, C Dong, W Zhu, BJ Kim, L Le, F Ren, AG Lind, J Dahl, ...
Journal of Vacuum Science & Technology B 33 (3), 2015
9 2015 Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping TS Kang, YH Lin, S Ahn, F Ren, BP Gila, SJ Pearton, DJ Cheney
Journal of Vacuum Science & Technology B 34 (1), 2016
7 2016