Large thickness dependence of the carrier mobility in a transparent oxide semiconductor, La-doped BaSnO3 AV Sanchela, M Wei, H Zensyo, B Feng, J Lee, G Kim, H Jeen, Y Ikuhara, ...
Applied physics letters 112 (23), 2018
51 2018 Effects of vacuum annealing on the electron mobility of epitaxial La-doped BaSnO3 films HJ Cho, T Onozato, M Wei, A Sanchela, H Ohta
APL materials 7 (2), 2019
48 2019 High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding∼ 3000 S cm− 1 M Wei, AV Sanchela, B Feng, Y Ikuhara, HJ Cho, H Ohta
Applied physics letters 116 (2), 2020
40 2020 Buffer layer-less fabrication of a high-mobility transparent oxide semiconductor, La-doped BaSnO 3 AV Sanchela, M Wei, J Lee, G Kim, H Jeen, B Feng, Y Ikuhara, HJ Cho, ...
Journal of materials chemistry C 7 (19), 5797-5802, 2019
23 2019 Investigation of electrical and thermal transport property reductions in La-doped HJ Cho, B Feng, T Onozato, M Wei, AV Sanchela, Y Ikuhara, H Ohta
Physical Review Materials 3 (9), 094601, 2019
19 2019 Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3 –SrSnO3 Solid‐Solution Based Thin Film Transistors AV Sanchela, M Wei, HJ Cho, H Ohta
Small 15 (8), 1805394, 2019
19 2019 Significant Suppression of Cracks in Freestanding Perovskite Oxide Flexible Sheets Using a Capping Oxide Layer L Gong, M Wei, R Yu, H Ohta, T Katayama
ACS nano 16 (12), 21013-21019, 2022
11 2022 Tuning of the Optoelectronic Properties for Transparent Oxide Semiconductor ASnO3 by Modulating the Size of A-Ions M Wei, HJ Cho, H Ohta
ACS Applied Electronic Materials 2 (12), 3971-3976, 2020
9 2020 Fabrication and Operating Mechanism of Deep‐UV Transparent Semiconducting SrSnO3 ‐Based Thin Film Transistor M Wei, L Gong, D Liang, HJ Cho, H Ohta
Advanced electronic materials 6 (7), 2000100, 2020
8 2020 Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1− xSrxSnO3 solid solution films HJ Cho, K Sato, M Wei, G Kim, H Ohta
Journal of Applied Physics 127 (11), 2020
6 2020 APL Mater. 7, 022507 (2019) HJ Cho, T Onozato, M Wei, A Sanchela, H Ohta
5 Optoelectronic properties of transparent oxide semiconductor ASnO3 (A= Ba, Sr, and Ca) epitaxial films and thin film transistors AV Sanchela, M Wei, HJ Cho, H Ohta
Journal of Vacuum Science & Technology A 40 (2), 2022
4 2022 Investigation of transport property reductions in epitaxial La-doped BaSnO3 films HJ Cho, B Feng, T Onozato, M Wei, A Sanchela, Y Ikuhara, H Ohta
JSAP Annual Meetings Extended Abstracts The 80th JSAP Autumn Meeting 2019 …, 2019
2019 Investigation of the Electron Mobility in La-doped BaSnO3 films using Time-Domain Thermoreflectance (TDTR) Method HJ Cho, M Wei, B Feng, A Sanchela, Y Ikuhara, H Ohta
JSAP Annual Meetings Extended Abstracts The 79th JSAP Autumn Meeting 2018 …, 2018
2018 Origin of Mobility Suppression in La-doped BaSnO3 Films (I) M Wei, A Sanchela, B Feng, J Lee, G Kim, H Jeen, Y Ikuhara, H Ohta
JSAP Annual Meetings Extended Abstracts The 65th JSAP Spring Meeting 2018 …, 2018
2018 Origin of Mobility Suppression in La-doped BaSnO3 Films (II) AV SANCHELA, M Wei, B Feng, J Lee, G Kim, HJ Jeen, Y Ikuhara, H Ohta
JSAP Annual Meetings Extended Abstracts The 65th JSAP Spring Meeting 2018 …, 2018
2018 Electric field thermopower modulation of BaSnO3− SrSnO3 solid solutions AV Sanchela, M Wei, HJ Cho, H Ohta
High electrical conductivity exceeding~ 3000 S cm− of a transparent oxide semiconductor, La-doped SrSnO3 M Wei, AV Sanchela, HJ Cho, H Ohta
Hiromichi OhtaProfessor of Research Institute for Electronic Science, Hokkaido UniversityE-mail confirmado em es.hokudai.ac.jp
