jiangtao qu
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2D Metal Organic Framework Nanosheet: A Universal Platform Promoting Highly Efficient Visible‐Light‐Induced Hydrogen Production
J Ran, J Qu, H Zhang, T Wen, H Wang, S Chen, L Song, X Zhang, L Jing, ...
Advanced Energy Materials 9 (11), 1803402, 2019
Attractive-domain-wall-pinning controlled Sm-Co magnets overcome the coercivity-remanence trade-off
H Chen, Y Wang, Y Yao, J Qu, F Yun, Y Li, SP Ringer, M Yue, R Zheng
Acta Materialia 164, 196-206, 2019
Full electric control of exchange bias at room temperature by resistive switching
L Wei, Z Hu, G Du, Y Yuan, J Wang, H Tu, B You, S Zhou, J Qu, H Liu, ...
Advanced Materials 30 (30), 1801885, 2018
Tunable Syngas Production through CO2 Electroreduction on Cobalt–Carbon Composite Electrocatalyst
R Daiyan, R Chen, P Kumar, NM Bedford, J Qu, JM Cairney, X Lu, R Amal
ACS Applied Materials & Interfaces 12 (8), 9307-9315, 2020
3D Atomic‐Scale Insights into Anisotropic Core–Shell‐Structured InGaAs Nanowires Grown by Metal–Organic Chemical Vapor Deposition
J Qu, S Du, T Burgess, C Wang, X Cui, Q Gao, W Wang, HH Tan, H Liu, ...
Advanced Materials 29 (31), 1701888, 2017
Study of drain induced barrier lowering (DIBL) effect for strained Si nMOSFET
JT Qu, HM Zhang, XB Xu, SS Qin
Procedia Engineering 16, 298-305, 2011
Atomically dispersed single co sites in Zeolitic imidazole frameworks promoting high‐efficiency visible‐light‐driven hydrogen production
J Ran, H Zhang, J Qu, B Xia, X Zhang, S Chen, L Song, L Jing, R Zheng, ...
Chemistry–A European Journal 25 (41), 9670-9677, 2019
Microstructural and Texture Evolution of Strip Cast Nd–Fe–B Flake
H Chen, W Xu, Z Ye, Y Yao, J Qu, F Yun, JA Warner, Z Cheng, J Liu, ...
Crystal Growth & Design 17 (12), 6550-6558, 2017
Grain size quantification by optical microscopy, electron backscatter diffraction, and magnetic force microscopy
H Chen, Y Yao, JA Warner, J Qu, F Yun, Z Ye, SP Ringer, R Zheng
Micron 101, 41-47, 2017
Direct observation of dopants distribution and diffusion in GaAs planar nanowires with atom probe tomography
J Qu, W Choi, P Katal Mohseni, X Li, Y Zhang, H Chen, S Ringer, R Zheng
ACS applied materials & interfaces 8 (39), 26244-26250, 2016
Atomic-scale tomography of semiconductor nanowires
J Qu, S Ringer, R Zheng
Materials Science in Semiconductor Processing 40, 896-909, 2015
Methodology exploration of specimen preparation for atom probe tomography from nanowires
J Qu, D Wong, S Du, L Yang, S Ringer, R Zheng
Ultramicroscopy 159, 427-431, 2015
Insights into the silver reflection layer of a vertical LED for light emission optimization
MA Khan, H Chen, J Qu, PW Trimby, S Moody, Y Yao, SP Ringer, ...
ACS applied materials & interfaces 9 (28), 24259-24272, 2017
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film …
XB Xu, HM Zhang, HY Hu, JT Qu
Chinese Physics B 20 (5), 058503, 2011
Extrinsic Two-Dimensional Flux Pinning Centers in MgB2 Superconductors Induced by Graphene-Coated Boron
W Li, J Kang, Y Liu, M Zhu, Y Li, J Qu, R Zheng, J Xu, B Liu
ACS applied materials & interfaces 11 (11), 10818-10828, 2019
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
XB Xu, HM Zhang, HY Hu, YC Li, JT Qu
Chinese Physics B 20 (10), 108502, 2011
Carbon-Coating Layers on Boron Generated High Critical Current Density in MgB2 Superconductor
H Liu, J Li, M Sun, J Qu, R Zheng, JM Cairney, M Zhu, Y Li, W Li
ACS Applied Materials & Interfaces 12 (7), 8563-8572, 2020
ITO regulated high-performance n-Si/ITO/α-Fe2O3 Z-scheme heterostructure towards photoelectrochemical water splitting
D Feng, J Qu, R Zhang, X Sun, L Zheng, H Liu, X Zhang, Z Lu, F Lu, ...
Journal of Catalysis 381, 501-507, 2020
Coercivity degradation caused by inhomogeneous grain boundaries in sintered Nd-Fe-B permanent magnets
H Chen, F Yun, J Qu, Y Li, Z Cheng, R Fang, Z Ye, SP Ringer, R Zheng
Physical Review Materials 2 (5), 054404, 2018
Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate
JT Qu, HM Zhang, GY Wang, XY Wang, HY Hu
Acta Physica Sinica 60 (5), 058502, 2011
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