Sara Dereste dos Santos Perseghini
Citado por
Citado por
The dependence of retention time on gate length in UTBOX FBRAM with different source/drain junction engineering
T Nicoletti, M Aoulaiche, LM Almeida, SD Santos, JA Martino, A Veloso, ...
IEEE electron device letters 33 (7), 940-942, 2012
Influence of the source composition on the analog performance parameters of vertical nanowire-TFETs
PGD Agopian, MDV Martino, SD dos Santos, FS Neves, JA Martino, ...
IEEE Transactions on Electron Devices 62 (1), 16-22, 2014
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics
SD Dos Santos, B Cretu, V Strobel, JM Routoure, R Carin, JA Martino, ...
Solid-State Electronics 97, 14-22, 2014
Epileptic seizure prediction from EEG signals using unsupervised learning and a polling-based decision process
LAS Kitano, MAA Sousa, SD Santos, R Pires, S Thome-Souza, AB Campo
Artificial Neural Networks and Machine Learning–ICANN 2018: 27th …, 2018
On the variability of the front-/back-channel LF noise in UTBOX SOI nMOSFETs
SD dos Santos, T Nicoletti, JA Martino, M Aoulaiche, A Veloso, M Jurczak, ...
IEEE transactions on electron devices 60 (1), 444-450, 2012
Towards single‐trap spectroscopy: Generation‐recombination noise in UTBOX SOI nMOSFETs
E Simoen, B Cretu, W Fang, M Aoulaiche, JM Routoure, R Carin, ...
physica status solidi (c) 12 (3), 292-298, 2015
The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures
T Nicoletti, S Santos, L Almeida, JA Martino, M Aoulaiche, A Veloso, ...
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
Low-frequency noise studies on fully depleted UTBOX silicon-on-insulator nMOSFETs: challenges and opportunities
E Simoen, M Aoulaiche, SD Dos Santos, JA Martino, V Strobel, B Cretu, ...
ECS Journal of Solid State Science and Technology 2 (11), Q205, 2013
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
KRA Sasaki, T Nicoletti, LM Almeida, SD dos Santos, A Nissimoff, ...
Solid-state electronics 97, 30-37, 2014
NW-TFET analog performance for different Ge source compositions
PGD Agopian, SD dos Santos, FS Neves, JA Martino, A Vandooren, ...
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2013
DIBL study using triple gate unstrained and uniaxial/biaxial strained FinFETs
SD Santos, JA Martino, E Simoen, C Claeys
ECS Transactions 23 (1), 591, 2009
Analog performance of gate-source/drain underlap triple-gate SOI nMOSFET
SD Santos, T Nicoletti, JA Martino
ECS Transactions 39 (1), 239, 2011
An FPGA-based SOM circuit architecture for online learning of 64-QAM data streams
MAA de Sousa, R Pires, SDS Perseghini, E Del-Moral-Hernandez
2018 International Joint Conference on Neural Networks (IJCNN), 1-8, 2018
Lessons learned from low-frequency noise studies on fully depleted utbox silicon-on-insulator nmosfets
ER Simoen, M Aoulaiche, SD Dos Santos, JA Martino, V Strobel, B Cretu, ...
ECS Transactions 53 (5), 49, 2013
Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
SD dos Santos, JA Martino, E Simoen, C Claeys
Journal of Integrated Circuits and Systems 5 (2), 154-159, 2010
Potential and limitations of UTBB SOI for advanced CMOS technologies
C Claeys, M Aoulaiche, E Simoen, T Nicoletti, SD dos Santos, JA Martino
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 1-6, 2013
Differentiation between epileptic and psychogenic nonepileptic seizures in electroencephalogram using wavelets and support-vector machines
KR dos Santos, MA de Abreu de Sousa, SD dos Santos, R Pires, ...
Applied Artificial Intelligence 36 (1), 2008612, 2022
Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs
V Strobel, B Cretu, SD dos Santos, E Simoen, JM Routoure, R Carin, ...
Workshop of the Thematic Network on Silicon on Insulator technology, devices …, 2013
A computer vision system for pallets verification in quality control
MVB de Morais, SD dos Santos, R Pires
International Journal of Precision Engineering and Manufacturing 24 (7 …, 2023
Advantages of different source/drain engineering on scaled UTBOX FDSOI nMOSFETs at high temperature operation
T Nicoletti, SD dos Santos, JA Martino, M Aoulaiche, A Veloso, M Jurczak, ...
Solid-state electronics 91, 53-58, 2014
O sistema não pode executar a operação agora. Tente novamente mais tarde.
Artigos 1–20