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Frank Mehnke
Frank Mehnke
ams OSRAM
E-mail confirmado em ams-osram.com - Página inicial
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
3712020
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
2062018
Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
F Mehnke, C Kuhn, M Guttmann, C Reich, T Kolbe, V Kueller, A Knauer, ...
Applied Physics Letters 105 (5), 2014
1322014
Highly conductive n-AlxGa1− xN layers with aluminum mole fractions above 80%
F Mehnke, T Wernicke, H Pingel, C Kuhn, C Reich, V Kueller, A Knauer, ...
Applied Physics Letters 103 (21), 2013
1242013
Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates
M Martens, F Mehnke, C Kuhn, C Reich, V Kueller, A Knauer, C Netzel, ...
IEEE Photonics Technology Letters 26 (4), 342-345, 2013
1182013
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 2015
1012015
Effective thermal management in ultraviolet light-emitting diodes with micro-LED arrays
NL Ploch, H Rodriguez, C Stolmacker, M Hoppe, M Lapeyrade, ...
IEEE transactions on electron devices 60 (2), 782-786, 2013
822013
Defect-related degradation of AlGaN-based UV-B LEDs
D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, J Glaab, ...
IEEE Transactions on Electron Devices 64 (1), 200-205, 2016
752016
Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80%
F Mehnke, XT Trinh, H Pingel, T Wernicke, E Janzén, NT Son, M Kneissl
Journal of Applied Physics 120 (14), 2016
682016
High-power UV-B LEDs with long lifetime
J Rass, T Kolbe, N Lobo-Ploch, T Wernicke, F Mehnke, C Kuhn, J Enslin, ...
Gallium Nitride Materials and Devices X 9363, 182-194, 2015
622015
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
M Guttmann, F Mehnke, B Belde, F Wolf, C Reich, L Sulmoni, T Wernicke, ...
Japanese Journal of Applied Physics 58 (SC), SCCB20, 2019
602019
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
N Lobo-Ploch, F Mehnke, L Sulmoni, HK Cho, M Guttmann, J Glaab, ...
Applied Physics Letters 117 (11), 2020
572020
Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs
F Mehnke, M Guttmann, J Enslin, C Kuhn, C Reich, J Jordan, S Kapanke, ...
IEEE Journal of Selected Topics in Quantum Electronics 23 (2), 29-36, 2016
562016
Improved injection efficiency in 290 nm light emitting diodes with Al (Ga) N electron blocking heterostructure
T Kolbe, F Mehnke, M Guttmann, C Kuhn, J Rass, T Wernicke, M Kneissl
Applied Physics Letters 103 (3), 2013
562013
Degradation of (InAlGa) N-based UV-B light emitting diodes stressed by current and temperature
J Glaab, C Ploch, R Kelz, C Stölmacker, M Lapeyrade, NL Ploch, J Rass, ...
Journal of Applied Physics 118 (9), 2015
532015
MOVPE growth of semipolar (112¯ 2) AlN on m-plane (101¯ 0) sapphire
J Stellmach, M Frentrup, F Mehnke, M Pristovsek, T Wernicke, M Kneissl
Journal of crystal growth 355 (1), 59-62, 2012
502012
Metamorphic Al0. 5Ga0. 5N: Si on AlN/sapphire for the growth of UVB LEDs
J Enslin, F Mehnke, A Mogilatenko, K Bellmann, M Guttmann, C Kuhn, ...
Journal of Crystal Growth 464, 185-189, 2017
492017
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
C De Santi, M Meneghini, D Monti, J Glaab, M Guttmann, J Rass, ...
Photonics Research 5 (2), A44-A51, 2017
452017
Structural and optical properties of semipolar (112¯ 2) AlGaN grown on (101¯ 0) sapphire by metal–organic vapor phase epitaxy
J Stellmach, F Mehnke, M Frentrup, C Reich, J Schlegel, M Pristovsek, ...
Journal of crystal growth 367, 42-47, 2013
442013
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
J Glaab, N Lobo-Ploch, HK Cho, T Filler, H Gundlach, M Guttmann, ...
Scientific reports 11 (1), 14647, 2021
422021
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