Mark Law
Mark Law
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Cited by
Cited by
Ion beams in silicon processing and characterization
E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
Ionizing radiation damage effects on GaN devices
SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov
ECS Journal of solid state science and technology 5 (2), Q35, 2015
Defects in microelectronic materials and devices
DM Fleetwood, RD Schrimpf
CRC press, 2008
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility
ME Law, E Solley, M Liang, DE Burk
IEEE Electron device letters 12 (8), 401-403, 1991
Continuum based modeling of silicon integrated circuit processing: An object oriented approach
ME Law, SM Cea
Computational Materials Science 12 (4), 289-308, 1998
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon
YM Haddara, BT Folmer, ME Law, T Buyuklimanli
Applied Physics Letters 77 (13), 1976-1978, 2000
Verification of analytic point defect models using SUPREM-IV (dopant diffusion)
ME Law, RW Dutton
IEEE transactions on computer-aided design of integrated circuits and …, 1988
The effect of impurities on diffusion and activation of ion implanted boron in silicon
LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu
MRS Online Proceedings Library (OPL) 610, 2000
Effects of hydrostatic pressure on dopant diffusion in silicon
H Park, KS Jones, JA Slinkman, ME Law
Journal of applied physics 78 (6), 3664-3670, 1995
SUPREM-IV users manual
ME Law, CS Rafferty, RW Dutton
Standford University, 1988
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
H Park, ME Law
Journal of applied physics 72 (8), 3431-3439, 1992
Diffusion of ion implanted boron in preamorphized silicon
KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ...
Applied physics letters 68 (19), 2672-2674, 1996
Stressed multidirectional solid-phase epitaxial growth of Si
NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman
Journal of Applied Physics 105 (8), 3, 2009
Fluorine-enhanced boron diffusion in amorphous silicon
JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett
Applied physics letters 82 (20), 3469-3471, 2003
Perspective on flipping circuits I
GJ Kim, EE Patrick, R Srivastava, ME Law
IEEE Transactions on Education 57 (3), 188-192, 2014
Simulation of oxide trapping noise in submicron n-channel MOSFETs
FC Hou, G Bosman, ME Law
IEEE Transactions on Electron Devices 50 (3), 846-852, 2003
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations
NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ...
IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011
The effect of boron implant energy on transient enhanced diffusion in silicon
J Liu, V Krishnamoorthy, HJ Gossman, L Rubin, ME Law, KS Jones
Journal of applied physics 81 (4), 1656-1660, 1997
Diffusion of Ge in single quantum wells in inert and oxidizing ambients
M Griglione, TJ Anderson, YM Haddara, ME Law, KS Jones, ...
Journal of Applied Physics 88 (3), 1366-1372, 2000
Diffusion of implanted nitrogen in silicon
L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde
Journal of Applied Physics 87 (5), 2282-2284, 2000
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