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BINIT SYAMAL
BINIT SYAMAL
E-mail confirmado em ntu.edu.sg
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Influence of channel and gate engineering on the analog and RF performance of DG MOSFETs
N Mohankumar, B Syamal, CK Sarkar
IEEE transactions on Electron Devices 57 (4), 820-826, 2010
1782010
Subthreshold analog/RF performance enhancement of underlap DG FETs with high-k spacer for low power applications
K Koley, A Dutta, B Syamal, SK Saha, CK Sarkar
IEEE transactions on electron devices 60 (1), 63-69, 2012
562012
Investigation of novel attributes of single halo dual-material double gate MOSFETs for analog/RF applications
N Mohankumar, B Syamal, CK Sarkar
Microelectronics Reliability 49 (12), 1491-1497, 2009
402009
A compact model for generic MIS-HEMTs based on the unified 2DEG density expression
J Zhang, B Syamal, X Zhou, S Arulkumaran, GI Ng
IEEE Transactions on Electron Devices 61 (2), 314-323, 2014
332014
Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions
K Koley, B Syamal, A Kundu, N Mohankumar, CK Sarkar
Microelectronics Reliability 52 (11), 2572-2578, 2012
282012
A comprehensive compact model for GaN HEMTs, including quasi-steady-state and transient trap-charge effects
B Syamal, X Zhou, SB Chiah, AM Jesudas, S Arulkumaran, GI Ng
IEEE Transactions on Electron Devices 63 (4), 1478-1485, 2016
262016
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
MJ Anand, GI Ng, S Arulkumaran, CM Manoj Kumar, K Ranjan, ...
Applied Physics Letters 106 (8), 083508, 2015
232015
Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress
MJ Anand, GI Ng, S Arulkumaran, B Syamal, X Zhou
Applied Physics Express 8 (10), 104101, 2015
182015
A surface potential based drain current model for asymmetric double gate MOSFETs
P Dutta, B Syamal, N Mohankumar, CK Sarkar
Solid-State Electronics 56 (1), 148-154, 2011
142011
Effect of single HALO doped channel in tunnel FETs: A 2-D modeling study
B Syamal, C Bose, CK Sarkar, N Mohankumar
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
102010
RF parameter extraction of Bulk FinFET: A non quasi static approach
A Kundu, B Syamal, K Koley, CK Sarkar, N Mohankumar
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010
82010
Performance and optimisation of dual material gate short channel BULK MOSFETs for analogue/mixed signal applications
N Mohankumar, B Syamal, CK Sarkar
International journal of electronics 96 (6), 603-611, 2009
82009
GaN HEMT compact model for circuit simulation
B Syamal, SB Chiah, X Zhou, A Ajaykumar, MJ Anand, GI Ng, ...
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
72015
A 2‐D surface‐potential‐based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs
P Dutta, B Syamal, N Mohankumar, CK Sarkar
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2014
72014
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
S Pandit, B Syamal, CK Sarkar
Solid-state electronics 63 (1), 177-183, 2011
62011
Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well
A Ajaykumar, Z Xing, B Syamal, SB Chiah
2014 44th European Solid State Device Research Conference (ESSDERC), 266-269, 2014
52014
Quasi-2D Surface-Potential-Based Critical Length for Drift-Diffusion
A Ajaykumar, X Zhou, SB Chiah, B Syamal
IEEE Electron Device Letters 37 (8), 1051-1054, 2016
42016
Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
X Zhou, J Zhang, B Syamal, SB Chiah, H Zhou, L Yuan
2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012
42012
Noise performance of Gate engineered double gate MOSFETs for analog and RF applications
N Mohankumar, B Syamal, J Shamshudeen, K Vijayan, R Saravanakumar, ...
International Conference on Electrical & Computer Engineering (ICECE 2010 …, 2010
42010
Modeling of threshold voltage for undoped surrounding gate MOSFET: A Gaussian approach
P Roy, B Syamal, N Mohankumar, CK Sarkar
2009 4th International Conference on Computers and Devices for Communication …, 2009
42009
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