Enrico Bellotti
Enrico Bellotti
Boston University Georgia Institute of Technology
E-mail confirmado em bu.edu
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
5112018
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
4712001
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
IH Oğuzman, E Bellotti, KF Brennan, J Kolnı́k, R Wang, PP Ruden
Journal of Applied Physics 81 (12), 7827-7834, 1997
2311997
Ensemble Monte Carlo study of electron transport in wurtzite InN
E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden
Journal of Applied Physics 85 (2), 916-923, 1999
2131999
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6467-6475, 2000
1622000
On the feasibility of p-type Ga2O3
A Kyrtsos, M Matsubara, E Bellotti
Applied Physics Letters 112 (3), 032108, 2018
1462018
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and
M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan
Journal of Applied Physics 88 (11), 6476-6482, 2000
1202000
Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures
E Bellotti, K Driscoll, TD Moustakas, R Paiella
Applied Physics Letters 92 (10), 101112, 2008
1142008
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
F Bertazzi, M Moresco, E Bellotti
Journal of Applied Physics 106 (6), 063718, 2009
1092009
Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
E Bellotti, K Driscoll, TD Moustakas, R Paiella
Journal of Applied Physics 105 (11), 113103, 2009
1092009
A numerical study of Auger recombination in bulk InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 231118, 2010
972010
Numerical analysis of HgCdTe simultaneous two-color photovoltaic infrared detectors
E Bellotti, D D'Orsogna
IEEE Journal of Quantum Electronics 42 (4), 418-426, 2006
952006
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 083709, 2007
882007
Numerical analysis of indirect Auger transitions in InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 011111, 2012
842012
Migration mechanisms and diffusion barriers of vacancies in
A Kyrtsos, M Matsubara, E Bellotti
Physical Review B 95 (24), 245202, 2017
662017
Alloy scattering in AlGaN and InGaN: A numerical study
E Bellotti, F Bertazzi, M Goano
Journal of applied physics 101 (12), 123706, 2007
652007
Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
E Bellotti, HE Nilsson, KF Brennan, PP Ruden, R Trew
Journal of Applied Physics 87 (8), 3864-3871, 2000
642000
Monte Carlo study of high-field carrier transport in -SiC including band-to-band tunneling
M Hjelm, HE Nilsson, A Martinez, KF Brennan, E Bellotti
Journal of applied physics 93 (2), 1099-1107, 2003
632003
A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies
M Matsubara, E Bellotti
Journal of Applied Physics 121 (19), 195701, 2017
592017
Ensemble Monte Carlo calculation of hole transport in bulk
E Bellotti, HE Nilsson, KF Brennan, PP Ruden
Journal of applied physics 85 (6), 3211-3217, 1999
561999
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